SUD30N04-10 N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD30N04-10 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current V 30a ID 30a IDM Avalanche Current Unit A 120 IAR 50 Repetitive Avalanche Energyb L = 0.1 mH EAR 125 Power Dissipation TC = 25_C PD 97c W TJ, Tstg - 55 to 175 _C Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter Symbol PCB Mountd J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air RthJA RthJC Typical Maximum 45 55 110 125 1.5 1.8 Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1” FR4 board. 1/4 www.freescale.net.cn Unit _C/W C/W SUD30N04-10 N-Channel 40 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) DS( ) VDS = 5 V, VGS = 10 V 3 30 VGS = 10 V, ID = 30 A 0.085 0.010 0.014 0.017 VGS = 10 V, ID = 30 A, TJ = 175_C 0.0185 0.022 VGS = 4.5 V, ID = 10 A 0.0115 0.014 VGS = 4.5 V, ID = 10 A, TJ = 125_C 0.0195 0.024 VGS = 4.5 V, ID = 10 A, TJ = 175_C 0.025 0.031 VDS = 15 V, ID = 30 A 20 nA mA m A VGS = 10 V, ID = 30 A, TJ = 125_C gfs V 57 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 160 Total Gate Chargec Qg 50 Gate-Source Chargec Qgs 9 Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V,, VGS = 10 V,, ID = 30 A pF 100 nC 11 Rg 1 td(on) 3.6 14 30 tr VDD = 15 V, RL = 0.5 W 13 30 td(off) ID 30 A, VGEN = 10 V, RG = 2.5 W 45 90 25 50 tf Source-Drain Ciode Ratings and Characteristics (TC = Continuous Current 600 W ns 25_C)b Is 30 Pulsed Current ISM 120 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/ms 50 100 ns Reverse Recovery Time Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. 2/4 www.freescale.net.cn A SUD30N04-10 N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10, 9, 8, 7, 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 90 60 4V 30 60 TC = 125_C 30 25_C 3V 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) Transconductance 2 3 4 5 6 On-Resistance vs. Drain Current 0.030 TC = - 55_C 0.025 r DS(on) - On-Resistance ( Ω ) 25_C 80 g fs - Transconductance (S) 1 VGS - Gate-to-Source Voltage (V) 100 125_C 60 40 20 0 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 0 30 60 90 120 0 20 40 VGS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) 2400 1600 Coss 800 80 100 40 50 Gate Charge 10 Ciss 3200 60 ID - Drain Current (A) Capacitance 4000 C - Capacitance (pF) - 55_C 0 Crss 0 VGS = 15 V ID = 30 A 8 6 4 2 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) 3/4 40 0 10 20 30 Qg - Total Gate Charge (nC) www.freescale.net.cn SUD30N04-10 N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 30 A 2.0 TJ = 150_C I S - Source Current (A) r DS(on) - On-Resistance ( Ω ) (Normalized) 2.5 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 25_C 10 1 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 200 40 100 10 ms Limited by rDS(on) 100 ms I D - Drain Current (A) I D - Drain Current (A) 30 20 10 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) 4/4 www.freescale.net.cn