FAIRCHILD FDPF20N50FT

FDP20N50F / FDPF20N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 20 A, 260 m
Features
Description
• RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
S
G
TO-220
D
TO-220F
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP20N50F
FDPF20N50FT
500
Unit
V
±30
- Continuous (TC = 25oC)
V
20
20*
12.9
12.9*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
80*
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
A
1110
(Note 3)
(TC = 25oC)
PD
TL
80
(Note 2)
A
mJ
20
V/ns
250
38.5
W
2.0
0.3
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP20N50F
FDPF20N50FT
RJC
Symbol
Thermal Resistance, Junction to Case, Max.
Parameter
0.5
3.3
RCS
Thermal Resistance, Case to Sink, Typ.
0.5
-
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
1
Unit
o
C/W
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
March 2013
Device Marking
FDP20N50F
Device
FDP20N50F
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF20N50FT
FDPF20N50FT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.7
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 10A
-
0.22
0.26

gFS
Forward Transconductance
VDS = 20V, ID = 10A
-
25
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
2550
3390
pF
-
350
465
pF
-
27
40
pF
-
50
65
nC
-
14
-
nC
-
20
-
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25
(Note 4)
-
45
100
ns
-
120
250
ns
-
100
210
ns
-
60
130
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
80
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 20A
-
-
1.5
V
trr
Reverse Recovery Time
154
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/s
-
0.5
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 20A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
2
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
100
o
ID,Drain Current[A]
ID,Drain Current[A]
80
1
150 C
o
25 C
10
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
10
20
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
400
0.4
VGS = 10V
0.3
VGS = 20V
0.2
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.1
*Note: TJ = 25 C
0
25
50
ID, Drain Current [A]
1
0.0
75
Figure 5. Capacitance Characteristics
Coss
4500
3000
1500
0
0.1
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
2.5
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
2. 250s Pulse Test
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
6000
Capacitances [pF]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
0.3
0.1
8
6
4
2
0
50
3
VDS = 100V
VDS = 250V
VDS = 400V
*Note: ID = 20A
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP20N50F
200
100
1.1
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1 ms
10 ms
10
100 ms
Operation in This Area
is Limited by R DS(on)
1
DC
*Notes:
0.1
o
1. TC = 25 C
o
0.01
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
800
Figure 9. Maximum Safe Operating Area
- FDPF20N50FT
Figure 10. Maximum Drain Current
vs. Case Temperature
200
100
25
40s
100s
10
20
ID, Drain Current [A]
ID, Drain Current [A]
10 s
100 s
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
o
15
10
5
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP20N50F
Thermal Response [ZJC]
1
0.5
0.1
0.2
PDM
0.1
0.02
t2
*Notes:
0.01
o
1. ZJC(t) = 0.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
0.002
-5
10
t1
t2
t1
0.05
0.01
PDM
-4
10
-3
10
-2
-1
10
10
0
10
1
10
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
4
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics (Continued)
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
Thermal Response [ZJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
o
1. ZJC(t) = 3.3 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-4
10
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
t2
*Notes:
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
5
2
10
3
10
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
6
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
7
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Mechanical Dimensions
TO-220B03
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
8
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
10
www.fairchildsemi.com
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET
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