Product specification DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low Gate Charge Low RDS(ON): • 30 mΩ @VGS = 10V • 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • • • Drain D SC-59 Gate Top View Maximum Ratings Equivalent Circuit Pin Configuration @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics IDM IS Value 30 ±20 6 5 24 2.25 Unit V V A A A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Notes: S G Source Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C /W °C 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMN3033LSN Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol TJ = 25°C TJ = 55°C Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) DYNAMIC PARAMETERS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Min Typ Max ⎯ 1 5 Unit BVDSS 30 ⎯ IDSS ⎯ ⎯ IGSS VGS(th) ⎯ 1.0 RDS (ON) ⎯ ±100 2.1 30 40 gFS VSD ⎯ ⎯ ⎯ ⎯ 25 36 5 0.7 ⎯ 1.1 S V Qg Qgs Qgd tD(on) tr tD(off) tf Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.5 3.8 2.9 11 7 63 30 755 136 108 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns pF pF pF Test Condition V ID = 250μA, VGS = 0V μA VDS = 30V, VGS = 0V nA V VDS = 0V, VGS = ±20V VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 10V, ID = 8A IS = 2.25A, VGS = 0V mΩ VGS = 5V, VDS = 15V, ID = 6A VGS = 10V, VDS = 15V, ID = 6A VGS = 10V, VDS = 15V, ID = 6A VDD = 15V, VGS = 10V, RD = 1.8Ω, RG = 6Ω VDS = 10V, VGS = 0V f = 1.0MHz 4. Test pulse width t = 300ms. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2