Product specification QM3001K P-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3001K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications . The QM3001K meet the RoHS and Green Product requirement , with full function reliability approved. BVDSS RDSON ID -30V 52mΩ -3.3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge D z Excellent CdV/dt effect decline z Green Device Available G S Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -3.8 -3.3 A 1 -3.1 -2.7 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Steady State 2 -17 A 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC http://www.twtysemi.com Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case [email protected] Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W 1 of 2 Product specification QM3001K P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-3A --- 42 52 VGS=-4.5V , ID=-2A --- 75 90 -1.2 -1.6 -2.5 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 11 --- S Qg Total Gate Charge (-4.5V) --- 6.4 9.0 --- 2.3 3.2 VDS=-15V , VGS=-4.5V , ID=-3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.9 2.7 Turn-On Delay Time --- 2.8 5.6 Td(on) uA nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 8.4 15.1 Turn-Off Delay Time ID=-3A --- 39 78.0 Fall Time --- 6 12.0 Ciss Input Capacitance --- 583 816 Coss Output Capacitance --- 100 140 Crss Reverse Transfer Capacitance --- 80 112 Min. Typ. Max. Unit --- --- -3.3 A --- --- -17 A --- --- -1 V --- 7.8 --- nS --- 2.5 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,4 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.twtysemi.com [email protected] 2 of 2