万和兴电子有限公司 www.whxpcb.com AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. AO8818 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4V) RDS(ON) < 24mΩ (VGS = 3.1V) RDS(ON) < 27mΩ (VGS = 2.5V) RDS(ON) < 58mΩ (VGS = 1.8V) ESD Rating: 1500V HBM D1 D2 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 1.5 W 0.96 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 7 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8818 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol 万和兴电子有限公司 www.whxpcb.com Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250μA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V 1 5 10 BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250μA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=7A TJ=125°C VGS=4.5V, ID=5A VGS=4V, ID=5A Rg Gate resistance 15 18 16 21 25 13 17 20 21 24 VGS=2.5V, ID=4A 17 22 27 VGS=1.8V, ID=3A 35 45 58 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 11.5 19.5 VDS=5V, ID=7A 45 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=7A V mΩ mΩ mΩ S 0.74 880 VGS=0V, VDS=15V, f=1MHz μA A 17.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 1.5 15 Forward Transconductance Crss 0.94 13.5 gFS μA V VGS=3.1V, ID=5A VSD Coss V TJ=55°C Static Drain-Source On-Resistance Units 30 VGS(th) IS Max VDS=24V, VGS=0V IDSS RDS(ON) Typ 1 V 2.5 A 1060 pF 130 pF 90 pF 1.3 2 Ω 11.6 14 nC 1.9 nC nC Qgd Gate Drain Charge 4.6 tD(on) Turn-On DelayTime 8.7 ns tr Turn-On Rise Time 13.7 ns 36 ns 11 ns VGS=5V, VDS=15V, RL=2.2Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/μs 16 Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/μs 7.7 Qrr 20 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 2: Feb 2008 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO8818 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 3.5V VDS=5V 10V 15 20 ID(A) ID(A) VGS =2.5V VGS =2V 10 125°C 10 5 0 25°C 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 40 1.6 VGS=4.5V Normalize ON-Resistance 30 RDS(ON)(mΩ) 0.5 VGS =2.5V 20 VGS =4.5V 10 VGS =10V 0 0 5 10 15 1.4 ID=5A VGS=2.5V ID=4A 1.2 VGS=10V ID=7A 1.0 20 0.8 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=7A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 20 25°C 1E-04 25°C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO8818 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=15V ID=7A Ciss 1600 Capacitance (pF) VGS(Volts) 4 3 2 1200 800 Crss 400 1 0 0 0 5 10 0 15 5 100.0 TJ(Max)=150°C TA=25°C 15 20 25 30 40 RDS(ON) limited 10μs 1ms 0.1s TJ(Max)=150°C TA=25°C 30 100μs Power (W) 10.0 10 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000