AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb- free (meets ROHS & Sony 259 specifications). Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS =-10V) < 75mΩ (VGS=4.5V) < 140mΩ (VGS =-4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G1 G2 S1 S2 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 60 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 ±20 4.7 -3.5 ID 3.8 -2.9 IDM 20 -20 2.5 2.5 1.6 1.6 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C 1/7 Max p-channel -60 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 37 74 28 p-ch p-ch p-ch 35 73 32 Units V V A W °C Max Units 50 °C/W 90 °C/W 40 °C/W 50 90 40 °C/W °C/W °C/W www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=10V, ID=4.7A VGS=4.5V, ID=3.0A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=4.7A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time 5 2.4 µA 250 µA 3 V A 49 TJ=125°C Units V VDS=48V, VGS=0V Zero Gate Voltage Drain Current gFS Max 60 IDSS IS Typ 60 65 57 75 mΩ 1 V 3.5 A 570 pF 17 0.78 450 mΩ S VGS=0V, VDS=30V, f=1MHz 74 VGS=0V, VDS=0V, f=1MHz 1.65 2 Ω 5.1 7 nC 2.5 3 nC pF 30 VGS=10V, VDS=30V, ID=4.7A pF 1 nC Gate Drain Charge 1.4 nC Turn-On DelayTime 5.4 ns 5.5 ns 17.2 ns 2.9 ns VGS=10V, VDS=30V, RL=6Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4.7A, dI/dt=100A/µs 25.4 Qrr Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs 29.4 35 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2 : Sept 2007 2/7 www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 15 10.0V VDS=5V 5.0V 25 4.5V 125°C 10 15 ID(A) ID (A) 20 4.0V 10 25°C 5 5 VGS=3.5V 0 0 1 2 3 4 0 5 1 VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V Normalized On-Resistance RDS(ON) (mΩ) 2.5 3 3.5 4 2.2 70 60 50 40 VGS=10V 30 20 0 5 10 15 VGS=10V ID=4.7A 2 1.8 1.6 VGS=4.5 1.4 ID=3A 1.2 1 0.8 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 ID=4.7A 140 1.0E+00 125°C 1.0E-01 120 IS (A) RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics 80 125° 100 1.0E-02 25°C 1.0E-03 80 25°C 1.0E-04 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 1.5 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 Capacitance (pF) 8 VGS (Volts) 800 VDS=30V ID= 4.7A 6 4 2 600 400 Coss 0 0 1 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 2 0 6 10ms 10µs 1ms 0.1s 10s TJ(Max)=150°C TA=25°C 1s 60 TJ(Max)=150°C TA=25°C 20 10 0 0.001 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics DC 0.1 0.1 20 30 100µs 10.0 1.0 10 40 RDS(ON) limited Power (W) ID (Amps) Crss 200 0 ZθJA Normalized Transient Thermal Resistance Ciss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/7 www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-48V, VGS=0V -60 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.5A ID(ON) RDS(ON) gFS VSD IS -1.5 -20 TJ=125°C VGS=-4.5V, ID=-2.8A Forward Transconductance VDS=-5V, ID=-3.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=-30V, f=1MHz Rg VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr VGS=-10V, VDS=-30V, ID=-3.5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-30V, RL=8.1Ω, RGEN=3Ω IF=-3.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs Max Units V -1 -5 µA 100 µA -1.8 -3 V A 95 133 112 115 TJ=55°C Static Drain-Source On-Resistance Gate resistance Typ 9 -0.77 mΩ 140 mΩ -1 -3.5 S V A 897 88 36 7.2 1080 9 pF pF pF Ω 8.1 3.9 10 5 nC nC 1.4 1.7 9 7.2 35 25.5 25.8 28.8 nC nC ns ns ns ns 35 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet ≤t ≤10s 10sthermal thermalresistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80 µs µs pulses, pulses, duty duty cycle cycle 0.5% 0.5% max. max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2:Sept 2007 5/7 www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 VDS=-5V -6.0V -5.0V 12 20 -4.5V 15 -4.0V 10 9 -ID(A) 25 -ID (A) 15 -10V 6 -3.5V 5 25°C 0 0 1 2 3 4 125°C 3 VGS=-3.0V 0 5 0 1 -VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance 2 VGS=-4.5V RDS(ON) (mΩ) 110 100 VGS=-10V 90 4 5 VGS=-10V 1.8 ID=-3.5A 1.6 1.4 1.2 VGS=-4.5V 1 ID=-2.8A 0.8 0.6 80 0 2 4 6 8 -50 10 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 200 ID=-3.5A 180 125°C 1.0E+00 160 1.0E-01 140 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics 120 120 1.0E-03 100 25°C 1.0E-04 80 25°C 1.0E-05 60 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 6/7 2 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOP609 Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 6 4 2 800 600 400 0 2 4 6 8 Crss 0 10 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 1ms 100µs 10µs 10ms 0.1s 1.0 40 50 60 TJ(Max)=150°C TA=25°C 20 10 10s DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 30 30 1s 0.1 20 40 TJ(Max)=150°C, TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) Coss 200 0 ZθJA Normalized Transient Thermal Resistance Ciss 1000 Capacitance (pF) 8 -VGS (Volts) 1200 VDS=-30V ID=-3.5A In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 7/7 www.freescale.net.cn