AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 56mΩ (VGS=10V) < 77mΩ (VGS=4.5V) RDS(ON) < 105mΩ (VGS = -10V) < 135mΩ (VGS = -4.5V) SOIC-8 D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 SOIC-8 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation TA=70°C ID IDM PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter Symbol A t ≤ 10s Maximum Junction-to-Ambient RθJA Maximum Junction-to-Ambient A Steady-State RθJL Steady-State Maximum Junction-to-Lead C 1/9 G1 S1 S2 p-channel Max p-channel -60 ±20 4.5 -3.2 3.6 -2.6 20 -20 Units V V A 2 2 1.28 1.28 -55 to 150 -55 to 150 °C Typ 48 74 35 Max 62.5 90 40 Units °C/W °C/W °C/W W www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 60 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C VGS=10V, ID=4.5A 5 nA 2.1 3 V 46 56 A Static Drain-Source On-Resistance VGS=4.5V, ID=3A 64 gFS Forward Transconductance VDS=5V, ID=4.5A 11 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 79 0.74 450 VGS=0V, VDS=30V, f=1MHz 77 mΩ mΩ S 1 V 3 A 540 pF 60 pF 25 VGS=0V, VDS=0V, f=1MHz µA 100 RDS(ON) TJ=125°C Units V VDS=48V, VGS=0V IDSS Crss Max pF Ω 1.65 2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.5 10.5 nC Qg(4.5V) Total Gate Charge 4.3 5.5 nC VGS=10V, VDS=30V, ID=4.5A Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 4.7 7 ns tr Turn-On Rise Time 2.3 4.5 ns tD(off) Turn-Off DelayTime 15.7 24 ns tf Turn-Off Fall Time 1.9 4 ns 27.5 35 ns nC VGS=10V, VDS=30V, RL=6.7Ω, RGEN=3Ω Ω IF=4.5A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 1.6 32 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: Oct 2010 2/9 www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10V VDS=5V 5.0V 15 125°C ID(A) ID (A) 10 4.5V 10 4.0V 5 5 25°C VGS=3.5V 0 0 0 1 2 3 4 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 2 Normalized On-Resistance 90 80 RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=4.5V 70 60 50 VGS=10V 40 30 20 VGS=10V ID=4.5A 1.8 1.6 VGS=4.5V 1.4 ID=3.0A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 140 1.0E+01 ID=4.5A 120 1.0E+00 125°C 1.0E-01 100 IS (A) RDS(ON) (mΩ Ω) 2.5 125°C 80 1.0E-02 25°C 1.0E-03 60 25°C 1.0E-04 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/9 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=30V ID= 4.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 10µs RDS(ON) 1ms 0.1 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10ms 0.1s 1s 10s DC 30 Power (W) ID (Amps) 30 40 1.0 20 10 0 0.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4/9 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 5/9 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -60 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 On state drain current VGS=-10V, VDS=-5V -20 TJ=55°C VGS=-10V, ID=-3.2A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=-5V, ID=-3.2A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=-4.5V, ID=-2.8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge -5 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-3.2A Units µA ±100 nA -2.1 -3 V 84 105 A 145 106 135 9 mΩ mΩ S -0.73 930 VGS=0V, VDS=-30V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Max V VDS=-48V, VGS=0V IDSS ID(ON) Typ -1 V -3 A 1120 pF 85 pF 35 pF 7.2 9 Ω 16 20 nC 8 10 nC 2.5 nC Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 8 12 tr Turn-On Rise Time 3.8 7.5 ns tD(off) Turn-Off DelayTime 31.5 48 ns tf trr Turn-Off Fall Time 7.5 15 ns IF=-3.2A, dI/dt=100A/µs 27 35 Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs 32 ns nC Body Diode Reverse Recovery Time VGS=-10V, VDS=-30V, RL=9.4Ω, RGEN=3Ω nC ns A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The valuevalue The in any in aany given a given application application depends depends on the onuser's the user's specific specific board board design. design. The current The current rating rating is based is based on the ont the ≤ 10s t ≤ thermal 10s thermal resistance rating. resistance B: Repetitive rating. rating, pulse width limited by junction temperature. B: Repetitive pulse width limitedimpedence by junctionfrom temperature. C. The R θJA israting, the sum of the thermal junction to lead R θJL and lead to ambient. C. the sum of theinthermal from lead R lead duty to ambient. D. The R static characteristics Figuresimpedence 1 to 6,12,14 arejunction obtainedtousing 80θJL µsand pulses, cycle 0.5% max. θJA is D. These The static characteristics Figures 1 to 6,12,14 are on obtained usingboard 80 µswith pulses, cyclein0.5% E. tests are performedinwith the device mounted 1 in 2 FR-4 2oz.duty Copper, a stillmax. air environment with T A=25°C. The SOA E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The curve provides a single pulse rating. SOA curve provides a single pulse rating. 6/9 www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 20 -10V -4.5V VDS=-5V 25 15 20 -ID(A) -ID (A) -4.0V 10 -3.5V 15 10 5 125°C VGS=-3.0V 5 25°C 0 0 0 1 2 3 4 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance RDS(ON) (mΩ Ω) 3 3.5 4 2 120 VGS=-4.5V 110 100 90 VGS=-10V 80 ID=-3.2A 1.8 VGS=-10V 1.6 1.4 VGS=-4.5V ID=-2.8A 1.2 1 0.8 70 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 180 1.0E+00 ID=-3.2A 125°C 160 1.0E-01 125°C 140 1.0E-02 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 130 120 1.0E-03 100 1.0E-04 80 25°C 60 2 3 4 5 25°C 1.0E-05 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 7/9 2 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1400 10 1200 -VGS (Volts) Capacitance (pF) VDS=-30V ID=-3.2A 8 6 4 Ciss 1000 800 600 400 Coss 2 Crss 200 0 0 0 4 8 12 16 20 0 100.0 30 40 50 60 TJ(Max)=150°C TA=25°C 30 RDS(ON) limited 100µs 1.0 1ms 0.1 10s TJ(Max)=150°C TA=25°C 0.0 0.1 DC 10ms 0.1s 1s Power (W) -ID (Amps) 20 40 10.0 20 10 0 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 8/9 0.0001 0.001 0.01 Pulse Width 0.1(s) 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AO4612 60V Complementary Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs t d(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 9/9 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn