RoHS 2SC1213/A 2SC1213 TRANSISTOR (NPN) D T ,. L TO-92 2SC1213A FEATURE Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 A 2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol Collector-base breakdown voltage 2SC1213 C E L 2SC1213A Collector-emitter breakdown voltage 2SC1213 2SC1213A Emitter-base breakdown voltage E Collector cut-off current J E DC current gain Collector-emitter saturation voltage W O Base-emitter voltage 1 2 3 N unless otherwise specified) R T Parameter IC C O Test conditions MIN TYP MAX 35 V(BR)CBO Ic= 10µA , IE=0 V(BR)CEO IC= 1 mA , IB=0 V(BR)EBO IE=10µA, IC=0 ICBO VCB= 20V , IE=0 hFE(1) VCE=3V, IC= 10mA 60 hFE(2) VCE=3V, IC= 500mA 10 VCE(sat) IC= 150mA, IB= 15 mA VBE VCE= 3V, IC= 10 mA V 50 35 V 50 4 V 0.5 Range 0.2 B C D 60-120 100-200 160-320 WEJ ELECTRONIC CO. Http:// www.wej.cn µA 320 0.6 V 0.75 V CLASSIFICATION OF hFE(1) Rank UNIT E-mail:[email protected]