RoHS 2SA933AS 2SA933AS D T ,. L TO-92S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM : 0.2 W (Tamb=25℃) Collector current I CM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol O 123 N unless otherwise specified) R T Parameter IC C O Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -50µA , IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=- 50µA, IC=0 -6 V ICBO VCB=-60V, IE=0 -0.1 µA IEBO VEB= -6V, IC=0 -0.1 µA hFE VCE=-6 V, IC= -0.1A VCEsat IC= -50mA, IB=-5mA Collector cut-off current C E L E Emitter cut-off current DC current gain J E Collector-emitter saturation voltage 560 -0.5 V VCE=-12V, IC=-2mA Transition frequency W 120 fT 120 MHz F=30MHz CLASSIFICATION OF hFE Rank Range Q R S 120-270 180-390 270-560 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]