DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features ID MAX TA = +25°C • Low On-Resistance • Low Input Capacitance 5.1A • Low Profile, 0.6mm Max Height 40mΩ @ VGS = 2.5V 4.7A • ESD Protected Gate 50mΩ @ VGS = 1.8V 4.2A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70mΩ @ VGS = 1.5V 3.6A • Halogen and Antimony Free. “Green” Device (Note 3) 59mΩ @ VGS = -4.5V -3.9A • Qualified to AEC-Q101 Standards for High Reliability RDS(ON) max V(BR)DSS 34mΩ @ VGS = 4.5V Q1 N-Channel 12V Q2 P-Channel -12V 81mΩ @ VGS = -2.5V -3.3A 115mΩ @ VGS = -1.8V -2.8A 215mΩ @ VGS = -1.5V -2.0A Mechanical Data • Case: U-DFN2020-6 Type B • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Description • Moisture Sensitivity: Level 1 per J-STD-020 This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 ideal for high efficiency power management applications. • Terminals Connections: See Diagram Below • Weight: 0.0065 grams (approximate) Applications • Load Switch • Power Management Functions • Portable Power Adaptors S2 G2 D2 D2 D1 U-DFN2020-6 Type B D1 G2 G1 D1 D2 Gate Protection Diode G1 S1 Gate Protection Diode S2 S1 ESD PROTECTED Pin1 N-CHANNEL MOSFET P-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMC1030UFDB -7 DMC1030UFDB -13 Notes: Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D3 Date Code Key Year Code Month Code 2012 Z Jan 1 M Y 2013 A Feb 2 DMC1030UFDB Document number: DS36933 Rev.1 - 2 Mar 3 D3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2014 B Apr 4 May 5 2015 C Jun 6 1 of 9 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D April 2014 © Diodes Incorporated DMC1030UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage VDSS Q1 N-CHANNEL 12 Gate-Source Voltage VGSS ±8 ±8 V -3.9 -3.1 A Characteristic Continuous Drain Current (Note 5) VGS = 4.5V Symbol Steady State TA = +25°C TA = +70°C ID 5.1 4.1 t < 5s TA = +25°C TA = +70°C ID 6.6 5.3 Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Q2 P-CHANNEL -12 IS 2 -5.0 -4.0 -1.7 IDM 35 -25 Units V A A A Thermal Characteristics Characteristic Symbol Units RθJC Value 1.36 1.89 92 66 18 TJ, TSTG -55 to +150 °C Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) PD RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range W °C/W Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 12V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(th) 0.4 — 1 V VDS = VGS, ID = 250μA — 17 34 VGS = 4.5V, ID = 4.6A — 20 40 VGS = 2.5V, ID = 4.2A — 24 50 — 28 70 Static Drain-Source On-Resistance RDS(ON) mΩ VGS = 1.5V, ID = 1.5A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance VSD — 0.7 1.2 V Ciss — 1003 — pF Output Capacitance Coss — 132 — pF Reverse Transfer Capacitance Crss — 115 — pF — 11.3 — Ω — 12.2 — nC — 23.1 — nC — 1.3 — nC Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Rg Qg Qgs VGS = 1.8V, ID = 3.8A VGS = 0V, IS = 4.8A VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 6.8A Gate-Drain Charge Qgd — 1.5 — nC Turn-On Delay Time tD(on) — 4.4 — ns Turn-On Rise Time tr — 7.4 — ns Turn-Off Delay Time tD(off) — 18.8 — ns tf trr — 4.9 — ns Body Diode Reverse Recovery Time — 7.6 — nS IS = 5.4A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 0.9 — nC IS = 5.4A, dI/dt = 100A/μs Turn-Off Fall Time Notes: VDD = 6V, VGS = 4.5V, RL = 1.1Ω, RG = 1Ω 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMC1030UFDB Document number: DS36933 Rev.1 - 2 2 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1030UFDB 20 VGS = 4.5V 18 VGS = 4.0V 16 ID, DRAIN CURRENT (A) VGS = 3.5V VGS = 3.0V 14 12 10 8 6 4 VGS = 0.9V 2 0 VGS = 1.5V 0.04 VGS = 18V VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 VGS = 2.5V ID = 5.0A 1.6 1.4 1.2 VGS = 1.8V ID = 3.0A 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMC1030UFDB Document number: DS36933 Rev.1 - 2 10 8 6 0 3 0.05 0 12 TA = 150°C 3 of 9 www.diodes.com TA = 85°C T A = 125°C TA = 25°C 2 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.03 14 4 VGS = 1.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VDS = 5.0V 18 VGS = 1.5V VGS = 2.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 16 20 VGS = 1.8V TA = -55°C 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 0.04 VGS = 4.5V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C T A = -55°C 0.01 0.00 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 VGS = 1.8V ID = 3.0A 0.03 VGS = 2.5V ID = 5.0A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMC1030UFDB 1 20 VGS(th), GATE THRESHOLD VOLTAGE (V) 18 0.6 IS, SOURCE CURRENT (A) 0.8 ID = 1mA ID = 250µA 0.4 0.2 16 14 12 10 TA = 150°C 8 TA = 125°C TA = 25°C 6 T A = 85°C TA = -55°C 4 2 0 -50 0 10000 8 VGS GATE THRESHOLD VOLTAGE (V) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) f = 1MHz Coss 100 Crss 10 100 ID, DRAIN CURRENT (A) Ciss 1000 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 12 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 6 4 VDS = 10V ID = 6.8A 2 0 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 25 RDS(ON) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA Safe Operation Area DMC1030UFDB Document number: DS36933 Rev.1 - 2 100 4 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1030UFDB Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -12 — VGS = 0V, ID = -250μA IDSS — — — -1.0 V Zero Gate Voltage Drain Current TJ = +25°C μA VDS = -12V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(th) -0.4 — -1 V VDS = VGS, ID = -250μA — 37 59 — 48 81 — 69 115 — 88 215 Static Drain-Source On-Resistance RDS(ON) VGS = -4.5V, ID = -3.6A mΩ VSD — -0.7 -1.2 V Ciss — 1028 — pF Output Capacitance Coss — 285 — pF Reverse Transfer Capacitance Crss — 254 — pF Gate Resistance Rg — 19.6 — Ω — 13 — nC Qg VGS = -1.8V, ID = -2.6A VGS = -1.5V, ID = -0.5A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Total Gate Charge (VGS = -4.5V) VGS = -2.5V, ID = -3.1A VGS = 0V, IS = -3.7A VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz — 20.8 — nC Qgs — 1.8 — nC Gate-Drain Charge Qgd — 4.5 — nC Turn-On Delay Time tD(on) — 5.6 — ns Turn-On Rise Time tr — 12.8 — ns Turn-Off Delay Time tD(off) — 30.7 — ns tf trr — 25.4 — ns Body Diode Reverse Recovery Time — 31.6 — nS IS = -3.6A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 7.8 — nC IS = -3.6A, dI/dt = 100A/μs Total Gate Charge (VGS = -8V) Gate-Source Charge Turn-Off Fall Time VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 20 VGS = -4.5V 18 VGS = -3.5V VGS = -3.0V 16 VGS = -1.8V 14 12 VGS = -1.5V 10 8 6 VGS = -1.0V 4 14 12 10 8 6 TA = 150°C 4 2 0 VDS = -5.0V 18 VGS = -4.0V 16 -ID, DRAIN CURRENT (A) 20 VGS = -2.0V -ID, DRAIN CURRENT (A) Notes: VDS = -10V, ID = -4.7A T A = 125 °C 2 VGS = -0.9V 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics DMC1030UFDB Document number: DS36933 Rev.1 - 2 3 5 of 9 www.diodes.com 0 T A = 85°C TA = 25°C TA = -55° C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 13 Typical Transfer Characteristics 3 April 2014 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMC1030UFDB VGS = -1.8V VGS = -1.5V VGS = -2.5V VGS = -4.5V 0.001 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 14 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = -2.5V ID = -5.0A 1.4 1.2 1 VGS = -1.8V ID = -3.0A 0.8 0.6 0.4 0.2 0 -50 VGS = -4.5V TA = 150°C 0.05 TA = 125°C T A = 85°C 0.04 TA = 25°C T A = -55°C 0.03 0.02 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.09 VGS = -1.8V ID = -3.0A 0.08 0.07 0.06 0.05 VGS = -2.5V ID = -5.0A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 17 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 16 On-Resistance Variation with Temperature 1 20 18 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.06 -ID = 1mA 0.6 -I D = 250µA 0.4 0.2 16 14 12 10 TA= 150°C 8 TA= 125°C 6 4 TA= 85°C T A= -55°C 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 18 Gate Threshold Variation vs. Ambient Temperature DMC1030UFDB Document number: DS36933 Rev.1 - 2 6 of 9 www.diodes.com 0 T A= 25°C 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 19 Diode Forward Voltage vs. Current April 2014 © Diodes Incorporated DMC1030UFDB 10000 Ciss 1000 Coss C rss 100 10 100 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 20 Typical Junction Capacitance 12 VDS = -10V ID = -4.7A 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 21 Gate-Charge Characteristics 25 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22 SOA Safe Operation Area 1 100 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 159°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMC1030UFDB Document number: DS36933 Rev.1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 23 Transient Thermal Resistance 7 of 9 www.diodes.com 10 100 1000 April 2014 © Diodes Incorporated DMC1030UFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 ⎯ ⎯ D2 0.50 0.70 0.60 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 ⎯ ⎯ L 0.25 0.35 0.30 z 0.225 ⎯ ⎯ All Dimensions in mm A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y G X2 G1 X1 G Z DMC1030UFDB Document number: DS36933 Rev.1 - 2 Y1 Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 8 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1030UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMC1030UFDB Document number: DS36933 Rev.1 - 2 9 of 9 www.diodes.com April 2014 © Diodes Incorporated