AON6290

AON6290
100V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6290 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
ID (at VGS=10V)
100V
85A
RDS(ON) (at VGS=10V)
< 4.6mW
RDS(ON) (at VGS=6V)
< 6.2mW
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
S
S
S
1
8
D
2
7
3
6
D
D
G
4
5
D
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
260
28
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
C
Maximum
100
A
23
Avalanche Current C
IAS
60
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
180
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.3.0: March 2014
7.3
Steady-State
Steady-State
RqJA
RqJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
83
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
208
PD
TC=100°C
-55 to 150
Typ
14
40
0.46
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°C
Max
17
55
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250mA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250mA
1
TJ=55°C
5
nA
3.4
V
3.8
4.6
6.5
7.9
VGS=6V, ID=20A
4.7
6.2
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
2.8
2.2
VGS=10V, ID=20A
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
mW
mW
S
1
V
85
A
4600
pF
415
pF
27
pF
0.75
1.2
W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
63
90
nC
Qg(4.5V) Total Gate Charge
28.5
40
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=20A
0.3
Qgs
Gate Source Charge
17
nC
Qgd
tD(on)
Gate Drain Charge
10
nC
Turn-On DelayTime
14.5
tr
Turn-On Rise Time
ns
5.5
tD(off)
Turn-Off DelayTime
ns
37
ns
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=500A/ms
7.5
ns
40
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
230
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=50V, RL=2.5W,
RGEN=3W
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: March 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
5V
100
VDS=5V
6V
80
4.5V
80
ID(A)
ID (A)
60
60
40
125°C
40
20
20
VGS=4.0V
25°C
0
0
0
1
2
3
4
1
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
2
6
RDS(ON) (mW)
2
VGS=6V
4
VGS=10V
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=6V
1.4
1.2
VGS
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18 Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
120
10
IS (A)
RDS(ON) (mW)
40
1.0E+00
125°C
8
6
4
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
25°C
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.3.0: March 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=50V
ID=20A
Capacitance (pF)
VGS (Volts)
6
4
2
3000
Coss
2000
Crss
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
60
80
100
Power (W)
100ms
1ms
10ms
DC
TJ(Max)=150°C
TJ(Max)=150°C
TC=25°C
800
10ms
10ms
RDS(ON)
limited
1.0
0.1
17
5
2
10
600
400
200
0.0
0.01
0.1
1
10
100
1000
VDS (Volts)
0
0.0001
0.001
0.01
0.1
1
0
10
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
40
1000
100.0
10.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
ID (Amps)
4000
1000
0
ZqJC Normalized Transient
Thermal Resistance
Ciss
5000
8
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
120
40
RqJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
Single Pulse
0.1
Ton
0.01
1E-05
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.3.0: March 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
TA=125°C
10
1
200
150
100
50
0
1
10
100
1000
0
25
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability
(Note C)
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
80
1000
Power (W)
Current rating I D(A)
50
60
40
17
5
2
10
100
10
20
0
0
25
50
75
100
125
1
0.0001 0.001
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.01
0.1
1
10
0
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZqJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
120
40
RqJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: March 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.3.0: March 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6