AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. ID (at VGS=10V) 100V 85A RDS(ON) (at VGS=10V) < 4.6mW RDS(ON) (at VGS=6V) < 6.2mW 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 260 28 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 100 A 23 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C TC=25°C EAS 180 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.3.0: March 2014 7.3 Steady-State Steady-State RqJA RqJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 83 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 208 PD TC=100°C -55 to 150 Typ 14 40 0.46 www.aosmd.com °C Max 17 55 0.6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 nA 3.4 V 3.8 4.6 6.5 7.9 VGS=6V, ID=20A 4.7 6.2 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.8 2.2 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mW mW S 1 V 85 A 4600 pF 415 pF 27 pF 0.75 1.2 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 90 nC Qg(4.5V) Total Gate Charge 28.5 40 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A 0.3 Qgs Gate Source Charge 17 nC Qgd tD(on) Gate Drain Charge 10 nC Turn-On DelayTime 14.5 tr Turn-On Rise Time ns 5.5 tD(off) Turn-Off DelayTime ns 37 ns tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/ms 7.5 ns 40 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 230 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: March 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 5V 100 VDS=5V 6V 80 4.5V 80 ID(A) ID (A) 60 60 40 125°C 40 20 20 VGS=4.0V 25°C 0 0 0 1 2 3 4 1 5 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 Normalized On-Resistance 2 6 RDS(ON) (mW) 2 VGS=6V 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =6V 1.4 1.2 VGS ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 120 10 IS (A) RDS(ON) (mW) 40 1.0E+00 125°C 8 6 4 1.0E-01 125°C 1.0E-02 1.0E-03 25°C 25°C 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: March 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=50V ID=20A Capacitance (pF) VGS (Volts) 6 4 2 3000 Coss 2000 Crss 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 60 80 100 Power (W) 100ms 1ms 10ms DC TJ(Max)=150°C TJ(Max)=150°C TC=25°C 800 10ms 10ms RDS(ON) limited 1.0 0.1 17 5 2 10 600 400 200 0.0 0.01 0.1 1 10 100 1000 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 40 1000 100.0 10.0 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) 4000 1000 0 ZqJC Normalized Transient Thermal Resistance Ciss 5000 8 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC 120 40 RqJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD Single Pulse 0.1 Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: March 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C TA=125°C 10 1 200 150 100 50 0 1 10 100 1000 0 25 Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 80 1000 Power (W) Current rating I D(A) 50 60 40 17 5 2 10 100 10 20 0 0 25 50 75 100 125 1 0.0001 0.001 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 120 40 RqJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: March 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.3.0: March 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6