AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD protected.This device is suitable for use as a load switch. Standard Product AOL1424 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 70A (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.5V) ESD Protected UIS Tested! Rg, Ciss,Coss,Crss Tested Ultra SO-8TM Top View Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B Current TC=25°C Pulsed Drain Current Avalanche Current H H TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case D 30 A EAR 135 mJ 18 50 5 TJ, TSTG A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 3 -55 to 175 Symbol A W 25 PDSM TA=70°C A IDSM IAR PD TC=100°C TA=25°C Power Dissipation A 23 TA=70°C A V 120 TA=25°C Power Dissipation B ±20 50 ID IDM C Repetitive avalanche energy L=0.3mH Units V 70 TC=100°C Continuous Drain A Current Maximum 30 RθJA RθJC Typ 20 45 2.5 °C Max 24 55 3.0 Units °C/W °C/W °C/W www.aosmd.com AOL1424 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 7.6 VGS=4.5V, ID=20A 6.5 8.0 VDS=5V, ID=20A 67 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 0.7 1803 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA V A 5.4 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current µA 2.5 6.3 Forward Transconductance Output Capacitance 1.8 4.5 TJ=125°C VSD Crss 5 10 VGS=10V, ID=20A gFS Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS IS Typ mΩ mΩ S 1.0 V 70 A 2170 pF 387 pF 238 pF 1.3 2 Ω 36 48 nC 19 nC 3.9 nC Gate Drain Charge 8.7 nC Turn-On DelayTime 7.6 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.4 ns 27 ns 8.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 17 33 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. H. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev3: July 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 4.5V 4V 5V VDS=5V 25 90 20 VGS=3.5V ID(A) ID (A) 6V 60 -40°C 125° 15 10 30 25°C 3V 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 1.8 VGS=4.5V 8 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 10 6 4 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 VGS=4.5V ID=20A 1.2 1 0.8 0.6 0 5 10 15 20 25 -60 30 -30 0 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+02 15 ID=20A 1.0E+01 125°C 1.0E+00 10 125°C IS (A) RDS(ON) (mΩ) 2 5 1.0E-01 1.0E-02 25°C 1.0E-03 25°C -40°C 1.0E-04 1.0E-05 0 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 Capacitance (pF) VGS (Volts) 3000 VDS=15V ID=20A 8 6 4 2500 Ciss 2000 1500 1000 Coss 2 Crss 500 0 0 10 20 30 0 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 140 RDS(ON) limited 10.0 10µs 120 100µ 100 1m DC 1.0 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 80 60 40 20 1 VDS (Volts) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 50 Current rating ID(A) Power Dissipation (W) 60 40 30 20 10 60 40 20 0 0 25 50 75 100 125 150 175 0 0 T CASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Current De-rating (Note B) 140 120 Power (W) 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 Single Pulse 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com