Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) 30 W (PEAK) 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation CASE 376B–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage (1) VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous (1) IC 3.0 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 110 0.625 Watts mW/°C Storage Temperature Range Tstg – 65 to + 200 °C Junction Temperature TJ 200 °C Symbol Max Unit RθJC 1.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 23% duty cycle) REV 6 1 MRF10031 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 2.0 mAdc hFE 20 — — — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%) Common–Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) GPB 9.0 9.5 — dB Collector Efficiency (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) η 40 45 — % Load Mismatch (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz, VSWR = 10:1 All Phase Angles) ψ + No Degradation in Output Power '. # !&%"&% # "&% + + + + + + + + &% Z1–Z9 — Microstrip, See Details Board Material — Teflon, Glass Laminate Dielectric Thickness = 0.030″ εr = 2.55, 2 Oz. Copper C1 — 75 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 1000 µF, 50 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long #! )%&# Figure 1. Test Circuit REV 6 2 "!&%!&%"&%"!(#(%%$ 0 C ' '!%$ " "&% "!(# (%%$ Figure 2. Output Power versus Input Power 0 C +38 +9 Ω +! 0 C "9?> ( "5D' ' 0 C +38 !27= +! !27= 4 4 4 4 4 4 4 4 4 4 +! 984?1,>/ 90 >2/ 9:>37?7 69,. 37:/.,8-/ 38>9 A23-2 >2/ ./@3-/ 9:/<,>/= ,> , 13@/8 9?>:?> :9A/< @96>,1/ ,8. 0</;?/8-B Figure 3. Series Equivalent Input/Output Impedances REV 6 3 PACKAGE DIMENSIONS Q G 2 PL % –B– R K D 2 PL H E N F % 2 PL –T– –A– % C CASE 376B–02 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 4 !%$ $! %!# "# $ * ! %#! $! $ $%* " !%!# %%# $ $