Order this document by MRF1150MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 150 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation CASE 332A–03, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Base Voltage VCBO 70 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Peak (1) IC 12 Adc Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C PD 583 3.33 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol Max Unit RθJC 0.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 70 — — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 70 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 10 mAdc hFE 10 30 — — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (4) (IC = 5.0 Adc, VCE = 5.0 Vdc) NOTES: (continued) 1. Pulse Width = 10 µs, Duty Cycle = 1%. 2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. 4. 80 µs Pulse on Tektronix 576 or equivalent. REV 0 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Cob — 25 32 pF Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) GPB 7.8 9.8 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) η 35 40 — % Load Mismatch (VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) No Degradation in Power Output & "$)( - - - * */. )( - - - - - - & #)($)( - C1, C2 — 220 pF Chip Capacitor, 100–mil ATC C3 — 0.1 µF/100 V C4 — 47 µF/75 V Electrolytic L1, L2 — 3 Turns #18 AWG, 1/8″ ID Z1–Z10 — Distributed Microstrip Elements — See Photomaster Board Material — 0.031″ Thick Teflon–Fiberglass, εr = 2.5 Figure 1. 1090 MHz Test Circuit 0 !9 !9 !9 $13 "$)( $#+& +((' 52 * * 75 µ6 Figure 2. Output Power versus Input Power REV 0 2 $#)($)($#+&+(('52 487 $#)($)($#+&+(('52 487 $13 + 52 + 52 + 52 + 52 * * 75 µ6 + 52 0 &%)", !9 Figure 3. Output Power versus Frequency 0 !9 75 µ6 $13 + 52 + 52 $ $#+&"/ $#)($)($#+&+(('52 487 + 52 + 52 * ')$$ , *# ( *# (' 0 !9 0 &%)", !9 Pout = 150 W pk VCC = 50 V tp = 10 µs D = 1% -13 0 !9 f MHz Zin Ohms ZOL* Ohms 960 1090 1215 1.5 + j9.6 5.0 + j7.5 2.4 + j5.6 2.6 + j4.1 2.7 + j4.6 2.8 + j5.3 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage, and frequency. Figure 6. Series Equivalent Input/Output Impedance $487 + 52 * * 75 µ6 ' µ6 * Figure 7. Typical Pulse Performance REV 0 3 Figure 5. Power Gain versus Frequency -# Figure 4. Output Power versus Supply Voltage + 52 $4 + 52 * * 75 µ6 PACKAGE DIMENSIONS "#(' !"'#"" " (# &"" $& "' ,! #"(&# " !"'#" " F K D H A J C CASE 332A–03 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 0 4 '(, $" ' !((& ' # (#&