Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF Performance Curves given for 28 Vdc and 36 Vdc Operation 5.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation CASE 336E–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous (1) IC 1.25 mAdc Total Device Dissipation @ TA = 25°C (1) Derate above 25°C PD 25 143 Watt mW/°C Storage Temperature Range Tstg –65 to +200 °C Junction Temperature TJ 200 °C Symbol Max Unit RθJC 7.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 1.0 mAdc hFE 20 — 100 — Cob — 7.0 10 pF Common–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) GPB 8.5 10.3 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) η 45 55 — % Load Mismatch (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 28 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power * '-, * &% # "&% * * * * * * C1, C2, C3 — 220 pF 100 mil Chip Capacitor C4 — 0.1 µF C5 — 47 µF/50 V Electrolytic L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long * * # !&%"&% Z1–Z10 — Microstrip, see details below Board Material — 0.030″ Glass Teflon, 2.0 oz. Copper, εr = 2.55 REV 6 Figure 1. Test Circuit 2 "7!&%"&%"!(#(%%$ "7!&%"&%"!(#(%%$ / A A ' '-, / A A ' '-, "26 "&% "!(# (%%$ "26 "&% "!(# (%%$ Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power "7=< ( ' ' / A *26 *7 Ω / A *26 !$ *! !$ B 3 3 3 3 B 3 B 3 B 3 B 3 3 B 3 *! 763=0+<. 7/ <1. 78<25=5 47+258.-+6,. 26<7 ?12,1 <1. -.>2,. 7=<8=< 78.:+<.; +< + 02>.6 7=<8=< 87?.: >74<+0. +6- /:.9=.6,@ *! / A Figure 4. Series Equivalent Input/Output Impedances REV 6 3 PACKAGE DIMENSIONS –A– G H Q 2 PL % –B– K D F N U $%) " !%!# %%# $ E C –T– CASE 336E–02 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 4 !%$ $! %!# "# $ ) ! %#! $! $ $