PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20(℃) 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N65D / HY4N65M 650V / 4A N-Channel Enhancement Mode MOSFET 650V, RDS(ON)=2.8W@VGS=10V, ID=2A Features TO-252 TO-251 • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 2 G D3 S • In compliance with EU RoHs 2002/95/EC Directives 1 G 2 3 D S Mechanical Information • Case: TO-252 / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Marking & Ordering Information 2 Drain 3 Source 1 TYPE MARKING PACKAGE PACKING HY4N65D 4N65D TO-252 2500PCS/REEL HY4N65M 4N65M TO-251 70PCS/TUBE Gate Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY4N65D HY4N65M Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS +30 V Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=4A, VDD=150V, L=22.5mH Operating Junction and Storage Temperature Range ID 4 4 A IDM 16 16 A PD 56.8 0.46 48 0.39 W EAS 180 mJ TJ, TSTG -55 to +150 ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Symbol HY4N65D HY4N65M Units Junction-to-Case Thermal Resistance RqJC 2.2 2.6 ℃/W Junction-to-Case Thermal Resistance RqJA 50 110 ℃/W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.1, 20-Dec-2013 PAGE.1 HY4N65D / HY4N65M Electrical Characteristics ( TC=25℃, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 650 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2.0 - 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=2A - 2.5 2.8 W Zero Gate Voltage Drain Current IDSS VDS=650V、VGS=0V - - 10 uA Gate Body Leakage Current IGSS VGS=+30V、VDS=0V - - +100 nA - 16.2 20 - 3.2 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 5.6 - Turn-On Delay Time td(on) - 16.8 22 - 36 46 - 21.8 32 - 19.2 28 - 480 - - 65 - - 1.3 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=520V，ID=4A VGS=10V VDD=325V，ID=4A VGS=10V，RG=25W VDS=25V，VGS=0V f=1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 4.0 A Max. Pulsed Source Current ISM - - - 16 A Diode Forward Voltage VSD IS=4A、VGS=0V - - 1.4 V Reverse Recovery Time trr - 210 - ns Reverse Recovery Charge Qrr VGS=0V、IS=4A di/dt=100A/us - 0.8 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV 1.1, 20-Dec-2013 PAGE.2 HY4N65D / HY4N65M Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 10 6 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 7 VGS= 20V~ 8.0V 7.0V 5 4 6.0V 3 2 5.0V 1 0 VDS =50V 1 25oC TJ = 125oC -55oC 0.1 0 10 20 30 40 50 1 2 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 12 RDS(ON) - On Resistance(W) RDS(ON) - On Resistance(W) 9 Fig.2 Transfer Characteristric 8 6 4 VGS=10V 2 VGS = 20V ID =2.0A 10 8 6 4 2 0 0 0 2 4 6 4 8 5 ID - Drain Current (A) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 1000 12 f = 1MHz VGS = 0V 800 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 600 Ciss 400 200 Coss Crss 0 ID =4.0A VDS=520V 10 VDS=325V 8 VDS=130V 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.1, 20-Dec-2013 30 0 2 4 6 8 10 12 14 16 18 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY4N65D / HY4N65M Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 VGS =10 V ID =2.0A BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 2 1.5 1 0.5 ID = 250mA 1.1 1 0.9 0.8 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 1.4 Fig.9 Body Diode Forward Voltage Characteristic REV 1.1, 20-Dec-2013 PAGE.4