DTP3006 www.din-tek.jp P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () Max. ID (A) 0.0600 at VGS = - 10 V - 30 0.0850 at VGS = - 4.5 V - 24 Qg (Typ.) 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S TO-220AB • Power Switch • Load Switch in High Current Applications • DC/DC Converters G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID V - 30 - 29 IDM - 100 IAS - 32 EAS 51 PD Unit 41.7 A mJ b 2.1 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 3 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). 1 DTP3006 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 250 VDS - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 30 V nA µA A VGS = - 10 V, ID = - 14 A 0.055 0.060 VGS = - 4.5 V, ID = - 12 A 0.075 0.085 VDS = - 20 V, ID = - 14 A 40 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec 67 VDS = - 20 V, VGS = - 10 V, ID = - 14 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 100 nC 13.5 14 Rg Turn-On Delay Timec pF 330 280 Qgd Gate Resistance Turn-Off Delay Time 2765 VGS = 0 V, VDS = - 20 V, f = 1 MHz VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 10 20 11 20 42 63 12 20 - 36 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 40 trr IRM(REC) Qrr ns b IS Continuous Current A - 1.5 V 38 57 ns 2.3 3.5 A 60 nC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTP3006 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 0.030 VGS = 10 V thru 4 V 0.025 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 30 20 10 VGS = 3 V VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 0.005 0 0 1 0.5 1.5 0 2 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 80 100 On-Resistance vs. Drain Current Output Characteristics 1.0 0.040 ID = 14 A 0.034 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C TC = - 55 °C 0 0 0.7 1.4 2.1 2.8 0.028 0.016 TJ = 25 °C 0.010 2 3.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 50 10 TC = 25 °C ID = 14 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 40 g fs - Transconductance (S) TJ = 125 °C 0.022 30 TC = 125 °C 20 10 8 VDS = 20 V 6 VDS = 10 V 4 VDS = 32 V 2 0 0 0 6 12 18 ID - Drain Current (A) Transconductance 24 30 0 14 28 42 56 70 Qg - Total Gate Charge (nC) Gate Charge 3 DTP3006 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.3 100 2.0 TJ = 150 °C 10 VGS(th) (V) IS - Source Current (A) ID = 250 μA 1.7 TJ = 25 °C 1 1.4 1.1 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 4300 125 150 125 150 51 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 3440 Ciss 2580 1720 860 Coss 49 47 45 Crss 43 - 50 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) 40 - 25 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 2.2 40 VGS = 10 V 1.9 30 1.6 VGS = 4.5 V 1.3 20 10 1.0 0.7 - 50 4 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0 25 50 75 100 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 DTP3006 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 IDAV (A) TJ = 150 °C ID - Drain Current (A) 100 TJ = 25 °C 10 100 μs 10 1 ms Limited by R DS(on)* 10 ms DC, 1 s, 100 ms 1 0.1 1 0.000001 TC = 25 °C Single Pulse 0.01 0.00001 0.001 0.0001 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case 5 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711)