GF4450 N-Channel Enhancement-Mode MOSFET VDS 60V RDS(ON) 24mΩ ID 7.5A H C N t E ET c u R T NF rod P GE SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches and (millimeters) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.244 (6.20) 0.228 (5.79) 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.035 (0.889) 0.025 (0.635) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.050 typ. (1.27) 0 °– 8 ° 0.050(1.27) 0.016 (0.41) Features Mechanical Data • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency • High temperature soldering in accordance with CECC802/Reflow guaranteed Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.5g Packaging codes/options: 5B - 2.5K per reel, 12.5K per carton Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) A = 25°C unless otherwise noted) Limit Unit VDS 60 VGS ± 20 ID 7.5 IDM 50 PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W V A Note: (1) Surface Mounted on FR4 Board, t ≤ 10s 6/14/00 GF4450 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – — V IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA IDSS VDS = 60V, VGS = 0V – – 1.0 µA ID(on) VDS ≥ 5V, VGS = 10V 20 – – A VGS = 10V, ID = 7.5A – 12 24 VGS = 6.0V, ID = 6.5A – 14 30 VDS = 15V, ID = 7.5A – 36 – – 65 91 – 12 – – 14 – – 17 30 – 13 20 – 78 117 – 31 40 Static Gate-Body Leakage Zero Gate Voltage Drain Current (2) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VDS = 30V, VGS = 10V ID = 7.5A VDD = 30V, RL = 30Ω ID ≈ 1A, VGEN = 10V RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 3147 – Output Capacitance Coss VDS = 30V – 283 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 140 – VSD IS = 2.1A, VGS = 0V – 0.71 1.2 V 2.1 A pF Source-Drain Diode Diode Forward Voltage Max. Diode Forward Current IS Notes: (1) Surface Mounted on FR4 Board, t ≤ 10s (2) Pulse test; pulse width ≤ 300ms, duty cycle ≤ 2% ton VDD td(on) RL VIN toff tr td(off) tf 90 % 90% VOUT D Output, VOUT 10% 10% VGS INVERTED RGEN DUT 90% G 50% Input, VIN 50% 10% S Switching Test Circuit Switching Waveforms PULSE WIDTH GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 50 VDS = 10V 4.5V 40 40 VGS =10V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 6.0V 5.0V 30 20 4.0V 30 TJ = 125°C 20 25°C 10 10 --55°C 3.5V 0 0 2 4 6 8 10 1 5 Fig. 4 – On-Resistance vs. Drain Current 3 0.035 2.8 ID = 250µA 2.6 2.4 2.2 2 1.8 6 0.03 0.025 VGS = 4.5V 0.02 0.015 6V 0.01 10V 0.005 1.6 0 1.4 --25 0 25 50 75 100 125 0 150 10 20 30 40 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.8 50 0.04 VGS = 10V ID = 7.5A ID = 7.5A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 4 Fig. 3 – Threshold Voltage vs. Temperature 0.04 1.6 3 VGS -- Gate-to-Source Voltage (V) 3.2 --50 2 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 1.4 1.2 1 0.8 0.03 TJ = 125°C 0.02 25°C 0.01 0.6 0 0.4 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 4000 VDS = 30V ID = 7.5A 8 6 4 Ciss 3000 2500 2000 1500 1000 2 Coss 500 Crss 0 0 0 10 20 30 40 50 60 0 70 10 20 30 40 50 Qg -- Total Gate Charge (nC) VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Breakdown Voltage vs. Junction Temperature 100 60 75 ID = 250µA VGS = 0V 73 BVDSS -- Drain-to-Source Breakdown Voltage (V) IS -- Source Current (A) f = 1MHz VGS = 0V 3500 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 10 TJ = 125°C 1 25°C 0.1 --55°C 71 69 67 65 63 61 0.01 0 0.2 0.4 0.6 0.8 1.0 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150