GFB75N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 6.5mΩ ID 75A H C N TRENFET Product E w G e N TO-263AB TM G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) D 0.045 (1.14) 0.055 (1.40) 0.245 (6.22) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN D S Mounting Pad Layout TO-263AB 0.047 (1.19) 0.055 (1.40) 0.575 (14.60) 0.625 (15.88) 0.33 (8.38) Seating Plate 0.090 (2.29) 0.110 (2.79) -T0.095 (2.41) 0.018 (0.46) 0.025 (0.64) 0.100 (2.54) 0.027 (0.686) 0.080 (2.03) 0.037 (0.940) 0.110 (2.79) 0.08 (2.032) 0.24 (6.096) 0.04 (1.016) 0.42 (10.66) 0.63 (17.02) Dimensions in inches and (millimeters) 0.12 (3.05) Features Mechanical Data • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency • High temperature soldering in accordance with CECC802/Reflow guaranteed Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1.3g Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 75 IDM 240 PD 62.5 25 W TJ, Tstg –55 to 150 °C TL 275 °C Junction-to-Case Thermal Resistance RθJC 2.0 °C/W Junction-to-Ambient Thermal Resistance (PCB Mounted) RθJA 62.5 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Note: (1) Maximum DC current limited by the package Unit V A 8/1/00 GFB75N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 — — V Drain-Source On-State Resistance(2) RDS(on) VGS = 10V, ID = 38A — 5.8 6.5 VGS = 4.5V, ID = 31A — 8.5 9.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 — 3.0 V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V — — 1.0 µA Gate-Body Leakage IGSS VGS = ±20V, VDS = 0V — — ±100 nA ID(on) VDS ≥ 5V, VGS = 10V 75 — — A gfs VDS = 15V, ID = 38A — 61 — S VDS=15V, ID=38A, VGS=5V — — 32.5 63 46 90 — 11 — — 11 — — 13 26 — 16 29 — 94 132 — 38 57 — 3240 — — 625 — — 285 — = 25°C unless otherwise noted) Static (2) On-State Drain Current (2) Forward Transconductance mΩ Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time VDS = 15V, VGS = 10V ID = 38A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance RG = 6Ω Coss Reverse Transfer Capacitance ID ≅ 1A, VGEN = 10V VDS = 15V, VGS = 0V f = 1.0MHZ Crss nC ns pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Notes: (1) Maximum DC current limited by the package (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VIN IS — — — 75 A VSD IS = 38A, VGS = 0V — 0.9 1.3 V VDD ton RL td(on) toff tr VOUT D Output, VOUT VGS td(off) tf 90 % 90% 10% 10% INVERTED RGEN DUT 90% G 50% S Input, VIN 50% 10% PULSE WIDTH Switching Test Circuit Switching Waveforms GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10V 6.0V ID -- Drain Source Current (A) 80 4.5V 80 5.0V 3.5V 60 40 3.0V 20 60 50 TJ = 125°C 40 30 0 0 0 1 2 3 4 1 4 5 Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.016 ID = 250µA 0.014 RDS(ON) -- On-Resistance (Ω) 1.5 1.3 1.1 0.9 0.7 0.012 0.01 VGS = 4.5V 0.008 VGS = 10V 0.006 0.004 0.002 0 --25 0 25 50 75 100 125 0 150 20 40 60 80 100 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.03 1.6 VGS = 10V ID = 38A RDS(ON) -- On-Resistance (Ω) ID = 38A 1.4 1.2 1 0.8 0.6 --50 3 VGS -- Gate-to-Source Voltage (V) 1.7 0.5 --50 2 VDS -- Drain-to-Source Voltage (V) TJ -- Junction Temperature (°C) RDS(ON) -- On-Resistance (Normalized) --55°C 25°C 20 10 VGS = 2.5V V(th) -- Gate-to-Source Threshold Voltage (V) VDS = 10V 70 4.0V ID -- Drain Source Current (A) 100 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 4000 VDS = 15V ID = 38A f = 1MHZ VGS = 0V 3500 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 Ciss 3000 2500 2000 1500 1000 Coss 2 500 0 0 0 10 20 30 40 50 60 70 Crss 0 5 Qg -- Gate Charge (nC) 20 15 25 30 Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 9 – Source-Drain Diode Forward Voltage 100 41 BVDSS -- Breakdown Voltage (V) VGS = 0V IS -- Source Current (A) 10 VDS -- Drain-to-Source Voltage (V) 10 TJ = 125°C 1 25°C 0.1 --55°C 0.01 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 ID = 250µA 40 39 38 37 36 35 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150