2SK2212 Silicon N Channel MOS FET REJ03G1003-0200 (Previous: ADE-208-1351) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK2212 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 200 ±20 10 40 10 30 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 200 ±20 20 Typ — — Max — — Unit V V Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) — — 2.0 — — — — 0.24 ±10 250 4.0 0.3 µA µA V Ω VGS = ±16 V, VDS = 0 VDS = 160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V*1 3.5 — — — — — — — — — 6 1000 360 65 18 80 65 50 1.1 190 — — — — — — — — — — S pF pF pF ns ns ns ns V ns ID = 5 A, VDS = 10 V*1 Body to drain diode reverse recovery time Note: 1. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6 |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 100 A / µs 2SK2212 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 s (1 sh n io 1 ot ) = 25 Operation in this area is limited by RDS(on) c (T °C 0.5 ) Drain Current ID (A) m t ra 2 µs 10 s 5 µs m = pe O 10 10 0 C 20 PW 1 30 10 10 20 D Channel Dissipation Pch (W) 40 0.2 0.1 Ta = 25°C 0.05 0 50 100 150 200 0.5 1 Typical Transfer Characteristics 10 VDS = 10 V Pulse Test 16 12 Drain Current ID (A) 6V 5.5 V 8 5V 4.5 V 4 4 8 8 6 Tc = 75°C 25°C 4 –25°C 2 4V 12 16 0 20 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 ID = 10 A 2 5A 1 2A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) 50 100 200 500 Typical Output Characteristics VGS = 3.5 V Drain to Source Saturation Voltage VDS (on) (V) 10 20 Drain to Source Voltage VDS (V) 10 V 0 5 Case Temperature TC (°C) 20 0 2 10 Pulse Test 5 2 1 0.5 VGS = 10 V 0.2 0.1 0.5 15 V 1 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2212 1.0 VGS = 10 V Pulse Test 0.8 0.6 ID = 10 A 5A 0.4 2A 0.2 0 –40 0 40 80 120 160 25°C 75°C 2 1 0.5 VDS = 10 V Pulse Test 0.2 0.1 0.1 0.3 1 3 10 30 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 5000 Capacitance C (pF) 200 100 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 5 0.2 100 Crss VGS = 0 f = 1 MHz 1 2 5 10 0 20 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 16 VDD = 50 V 100 V 150 V VGS 12 300 ID = 15 A VDS VDD = 150 V 100 V 50 V 100 8 16 24 4 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 8 0 40 Switching Time t (ns) 20 400 0 Coss 5 0.5 500 200 Ciss 1000 10 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Tc = –25°C 5 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 10 200 td(off) 100 50 tf tr td(on) 20 10 5 0.2 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.5 1 2 5 Drain Current ID (A) 10 20 2SK2212 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 VGS = 0, –5 V 8 10 V 4 0 0.4 5V 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17 4.17°C/W, Tc = 25°C 0.1 0.05 0.03 0.01 10 µ PDM 0.02 e 1 uls 0.0 tp o h 1s D= PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50 Ω VDD = 30 V 10% 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2212 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK2212-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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