RENESAS 2SJ471

2SJ471
Silicon P Channel DV-L MOS FET
REJ03G0865-0200
(Previous: ADE-208-540)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 25 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
3. Source
G
1 2
Rev.2.00 Sep 07, 2005 page 1 of 6
3
S
2SJ471
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Symbol
VDSS
Value
–30
Unit
V
VGSS
ID
±20
–30
V
A
–120
–30
A
A
30
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–30
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Zero gate voltage drain current
V (BR) GSS
IDSS
±20
—
—
—
—
–10
V
µA
IG = ±100 µA, VDS = 0
VDS = –30 V, VGS = 0
IGSS
VGS (off)
—
–1.0
—
—
±10
–2.0
µA
V
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
RDS (on) 1
RDS (on) 2
—
—
25
40
35
60
mΩ
mΩ
ID = –15 A, VGS = –10 V
Note 3
ID = –15 A, VGS = –4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
12
—
20
1700
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
950
260
—
—
pF
pF
ID = –15 A, VDS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
20
290
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
170
130
—
—
ns
ns
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
–1.1
70
—
—
V
ns
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
Test Conditions
ID = –10 mA, VGS = 0
Note 3
ID = –15 A
VGS = –10 V
RL = 0.67 Ω
IF = –30 A, VGS = 0
IF = –30 A, VGS = 0
diF/dt = 50 A/µs
Note 3
2SJ471
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–500
1
m
=
–5
)
ot
sh
s
1
s(
m
10
–10
c=
(T
Operation in
this area is
limited by RDS (on)
)
°C
25
–2
–1
0
0
50
100
150
Case Temperature
Ta = 25°C
–0.5
–0.1 –0.3
–1
200
Tc (°C)
–3
–10
Drain to Source Voltage
Typical Output Characteristics
–10 V
µs
ID (A)
0
–50
n
tio
ra
pe
O
10
–20
10 µs
PW
20
–100
Drain Current
30
DC
Channel Dissipation
–200
10
Pch (W)
40
–30
–100
VDS (V)
Typical Transfer Characteristics
–6 V
–50
–50
Tc = –25°C
–5 V
–4.5 V
–4 V
–40
ID (A)
ID (A)
Pulse Test
–3.5 V
25°C
75°C
–30
–3 V
–20
VGS = –2.5 V
–10
Drain Current
–30
Drain Current
–40
–20
–10
VDS = –10 V
Pulse Test
0
0
–2
–4
–6
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
ID = –20 A
–0.4
–10 A
–0.2
–5 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 6
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
VDS (V)
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
0
–10
–8
0.5
Pulse Test
0.2
0.1
VGS = –4 V
0.05
0.02
0.01
–1
–10 V
–2
–5
–10
Drain Current
–20
ID (A)
–50
2SJ471
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
ID = –20 A
0.06
VGS = –4 V
–5 A, –10 A
0.04
–5 A, –10 A, –20 A
0.02
–10 V
0
–40
0
40
80
Case Temperature
120
160
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5
VDS = –10 V
Pulse Test
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
10000
500
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
5
–0.1 –0.2 –0.5 –1 –2
500
Crss
100
IDR (A)
–8
–12
VDD = –25 V
–10 V
–5 V
–16
–40
–50
0
16
32
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 6
48
64
Qg (nc)
–20
80
VGS (V)
–4
VGS
VDS
–30
ID = –30 A
–4
–8
–12
–16
–20
1000
500
Switching Time t (ns)
–20
0
Switching Characteristics
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
–10
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
0
VDD = –5 V
–10 V
–25 V
Coss
1000
Dynamic Input Characteristics
0
Ciss
2000
200
–5 –10 –20 –50
Reverse Drain Current
–5 –10 –20 –50
td(off)
200
100
50
tf
tr
td(on)
20
10
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2
Drain Current
–5 –10 –20
ID (A)
–50
2SJ471
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–50
Pulse Test
–40
–10 V
–30
–5 V
–20
VGS = 0, 5 V
–10
0
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.02
PDM
0.1
0.03
0.0
1
1s
t
ho
0.01
10 µ
pu
D=
l se
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
10 V
50 Ω
VDD
= –10 V
Vout
td(on)
Rev.2.00 Sep 07, 2005 page 5 of 6
10%
tr
10%
td(off)
tf
2SJ471
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AE-A
TO-220CFM / TO-220CFMV
1.9g
0.6 ± 0.1
2.54
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
2.54
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
15.0 ± 0.3

2.5 ± 0.2
13.6 ± 1.0
JEITA Package Code
0.7 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SJ471-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
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Colophon .3.0