2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous: ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-92(1)) D 1. Source 2. Drain 3. Gate G 32 1 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1337 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 100 Unit V VGSS ID ±20 0.3 V A 1.2 0.3 A A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current ID(pulse) IDR *1 Channel dissipation Channel temperature Pch Tch 400 150 mW °C Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V(BR)DSS V(BR)GSS 100 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Gate to source leak current Zero gate voltage drain current IGSS IDSS — — — — ±10 50 µA µA VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 1.0 — — 3.5 2.0 4.5 V Ω ID = 1 mA, VDS = 10 V 2 ID = 0.2 A, VGS = 10 V * 4.0 0.35 6.5 — Ω S ID = 0.2 A, VGS = 4 V * 2 ID = 0.2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz Drain to source breakdown voltage Gate to source breakdown voltage |yfs| — 0.22 Input capacitance Output capacitance Ciss Coss — — 35 14 — — pF pF Reverse transfer capacitance Turn-on delay time Crss td(on) — — 3.5 2 — — pF ns Rise time Turn-off delay time tr td(off) — — 4 17 — — ns ns Fall time Body to drain diode forward voltage tf VDF — — 15 0.9 — — ns V trr — 80 — ns Forward transfer admittance Body to drain diode reverse recovery time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions 2 ID = 0.2 A, VGS = 10 V, RL = 150 Ω IF = 0.3 A, VGS = 0 IF = 0.3 A, VGS = 0, diF/dt = 50 A/µs 2SK1337 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 5 0.05 ea DS 0.02 (1 sh ot ) n Ta = 25°C 0.005 0.1 150 m s io 100 10 t ra 50 (o n) ar 0.1 = 1 10 0 µ s 0 1 m µs s pe 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 1.0 Pulse Test 5V VGS = 4 V 0.8 0.6 Drain Current ID (A) 1.0 Drain Current ID (A) 0.2 0.01 0 PW O 200 0.5 O is per lim at ite ion d in by th R is 400 1 C Drain Current ID (A) 2 D Channel Dissipation Pch (mW) 600 3.5 V 0.4 3V 0.2 0.8 VDS = 10 V Pulse Test –25°C TC = 25°C 75°C 0.6 0.4 0.2 2.5 V 4 8 12 16 20 4 2 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 ID = 0.5 A 2 1 0.2 A 0.1 A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 50 Pulse Test 20 10 VGS = 4 V 5 10 V 2 1 0.5 0.02 0.05 0.1 0.2 0.5 Drain Current ID (A) 1 2 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1337 10 ID = 0.5 A Pulse Test 0.2 A 8 0.1 A 6 0.2 A VGS = 4 V 4 0.1 A 0.5 A VGS = 10 V 2 0 –40 40 0 80 120 160 1 TC = –25°C 25°C 75°C 0.5 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 2 1 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1,000 VGS = 0 f = 1 MHz 200 Capacitance C (pF) di/dt = 50 A/µs, Ta = 25°C VGS = 0 100 50 20 100 Ciss Coss 10 10 Crss 5 0.02 0.05 0.2 0.1 0.5 1 1 0 2 30 50 40 Dynamic Input Characteristics Switching Characteristics 20 50 V 80 V 16 120 12 VGS VDS ID = 0.3 A VDD = 80 V 50 V 25 V 40 4 0 0.8 1.6 2.4 3.2 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 8 0 4.0 50 Switching Time t (ns) VDD = 25 V 160 0 20 Drain to Source Voltage VDS (V) 200 80 10 Reverse Drain Current IDR (A) Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 10 V Pulse Test 2 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 5 td (off) 20 tf 10 5 tr td (on) 2 • VGS = 10 V VDD = 30 V PW = 2 µs, duty < 0.1% 1 0.5 0.02 • 0.05 0.1 0.2 0.5 Drain Current ID (A) 1 2 2SK1337 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 1.0 Pulse Test 0.8 0.6 0.4 VDD = 10 V 5V 0.2 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1337 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SK1337TZ-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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