2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 3 2 1 1. Gate 2. Drain 3. Source 4. Drain G 4 S Note: Marking is “CY”. *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value –200 Unit V VGSS ID ±15 –0.5 V A –1.0 –0.5 A A 1 150 W °C –55 to +150 °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min –200 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±15 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 IDSS VGS (off) — –2.0 — — –50 –4.0 µA V VDS = –160 V, VGS = 0 ID = –1 mA, VDS = –10 V RDS (on) RDS (on) — — 8.0 10.0 12.0 15.0 Ω Ω ID = –0.25 A, VGS = –10 V Note 3 ID = –1 A, VGS = –10 V Forward transfer admittance Input capacitance |yfs| Ciss 0.18 — 0.3 75 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 32 5 — — pF pF ID = –0.25 A, VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 6 6 — — ns ns Turn-off delay time Fall time td (off) tf — — 17 15 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — 0.95 100 — — V ns Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = –10 mA, VGS = 0 Note 3 ID = –0.25 A VGS = –10 V RL = 120 Ω IF = –0.5 A, VGS = 0 IF = –0.5 A, VGS = 0 diF/dt = 50 A/µs Note 3 2SJ186 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –10 ID (A) Pch (W) 1.2 Drain Current Channel Dissipation 0.8 0.4 10 –1 10 0µ PW 1 s m = s DC 10 ms Op era (1 sh tio ot) n( Tc =2 Operation in 5° this area is C) limited by RDS (on) –0.1 –0.01 Ta = 25°C 0 0 50 100 Case Temperature 150 –0.001 –1 Tc (°C) –1.0 –10 –100 –300 –1000 –30 –1.0 –25°C 25°C –6 V ID (A) ID (A) –8 V –0.8 –5 V –0.4 –0.2 Drain Current Drain Current –0.8 Tc = 75°C –0.6 –0.6 –0.4 –0.2 VGS = –4 V 0 –10 –20 –30 Drain to Source Voltage –40 Pulse Test –16 –1 A –8 –0.5 A ID = –0.2 A 0 0 –4 –8 –12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 6 –16 –20 VGS (V) 0 –2 –4 –6 –8 Gate to Source Voltage VDS (V) –20 –4 0 –50 Drain to Source Saturation Voltage vs. Gate to Source Voltage –12 VDS = –20 V Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) 0 VDS (V) Typical Transfer Characteristics Pulse Test –10 V –3 Drain to Source Voltage Typical Output Characteristics Drain to Source Saturation Voltage VDS (on) (V) µs –10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 VGS = –10 V 10 –15 V 5 2 1 –0.01 –0.02 –0.05 –0.1 –0.2 Drain Current –0.5 ID (A) –1 2SJ186 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 24 Pulse Test VGS = –10 V –1 A 20 16 –0.5 A 12 ID = –0.2 A 8 4 –40 0 40 80 Case Temperature 120 160 1 0.5 0.2 0.02 Tc (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) 200 100 50 Pulse Test Ta = 25°C di / dt = 50 A / µs VGS = 0 Reverse Drain Current –0.5 30 Crss –1 IDR (A) VDD = –200 V –150 V –100 V –12 –16 –800 ID = –0.5 A Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 6 6 8 Qg (nc) –20 –30 –40 –50 –20 10 VGS (V) 100 Switching Time t (ns) Drain to Source Voltage –4 –8 4 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS (V) VDD = –100 V –150 V –200 V 2 0 Switching Characteristics –400 0 Coss 10 1 0 –1000 Ciss 3 0 –600 VGS = 0 f = 1 MHz 100 Dynamic Input Characteristics VGS –1 –0.5 Capacitance vs. Drain to Source Voltage 300 –0.05 –0.1 –0.2 –0.05 –0.1 –0.2 Drain Current ID (A) 500 VDS VDS = –20 V Pulse Test 0.01 –0.01 –0.02 1000 –200 75°C 0.05 1000 10 –0.01 –0.02 25°C 0.1 Body-Drain Diode Reverse Recovery Time 20 Tc = –25°C 50 tf 20 10 td(off) td(on) 5 tr 2 V = –10 V, V = –30 V GS DD PW = 2 µs, duty ≤ 1 % 1 –0.01 –0.02 –0.05 –0.1 –0.2 Drain Current –0.5 ID (A) –1 2SJ186 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) –1.0 Pulse Test –0.8 –0.6 –0.4 VGS = –10 V –0.2 0, 5 V 0 –1.2 –1.6 Source to Drain Voltage VSD 0 Rev.2.00 Sep 07, 2005 page 5 of 6 –0.4 –0.8 –2.0 (V) 2SJ186 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name Quantity Shipping Container 2SJ186CYEL-E 1000 pcs φ178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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