2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK1636(L), 2SK1636(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS Ratings 250 Unit V VGSS ID ±30 15 V A 60 15 A A 1 Drain peak current Body to drain diode reverse drain current ID(pulse)* IDR 2 Channel dissipation Channel temperature Pch* Tch 75 150 W Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Tstg –55 to +150 °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 250 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 2.0 — — 250 3.0 µA V VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) — 0.22 0.27 Ω ID = 8 A, VGS = 10 V * |yfs| 6.0 10.0 — S ID = 8 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss — — 1250 510 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 85 24 — — pF ns tr 85 110 — — ns ns Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 60 1.0 — — ns V trr — 400 — ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 8 A, VGS = 10 V, RL = 3.75 Ω IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 100 A/µs 2SK1636(L), 2SK1636(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area µs ) m s 10 s m O ) ot Sh n tio ra 3 (1 pe = (T C 1 °C 25 Drain Current ID (A) 0 1 = C 40 10 PW 80 D ) Channel Dissipation Pch (W) 10 µs 30 10 O is per lim at ite ion d in by th R is ar DS ea (o n 100 120 0.3 Ta = 25°C 0.1 0 50 100 1 150 Case Temperature TC (°C) VDS = 10 V Pulse Test Pulse Test 16 5V 12 8 4.5 V 4 4V 16 12 8 Ta = 75°C 25°C –25°C 4 VGS = 3.5 V 4 8 12 16 4 2 6 10 8 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 6 4 ID = 15 A 10 A 2 0 0 20 5A 2 4 6 8 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 10 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 300 1,000 Typical Transfer Characteristics 5.5 V 8V 100 20 Drain Current ID (A) Drain Current ID (A) 10 V 30 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 20 10 3 5 Pulse Test 2 1 VGS = 10 V 0.5 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test VGS = 10 V 0.8 0.6 10 A ID = 15 A 0.4 5A 0.2 0 –40 40 0 80 120 160 20 TC = –25°C 10 25°C 75°C 5 2 1 0.5 0.5 1 2 5 10 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 200 100 50 VGS = 0 f = 1 MHz 1 2 5 10 20 100 Crss 0 50 10 30 20 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 VDD = 50 V 100 V 200 V 16 VGS 300 ID = 15 A 12 VDS 8 4 VDD = 200 V 100 V 50 V 0 0 Coss 10 10 0.5 100 Ciss 1,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 20 200 50 10,000 500 400 20 Body to Drain Diode Reverse Recovery Time 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 100 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 10 V Pulse Test Drain Current ID (A) 1,000 Drain to Source Voltage VDS (V) 50 Case Temperature TC (°C) 50 500 Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1636(L), 2SK1636(S) 200 td (off) 100 tf 50 tr td (on) 20 VGS = 10 V, PW = 2 µs duty < 1% 10 5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK1636(L), 2SK1636(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 8 4 VGS = 10 V VGS = 0, –5 V 0.4 0 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 θch–c (t) = γS (t) • θch–c θch–c = 1.67°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.02 0.03 0.01 1 0.01 10 µ ot Sh lse Pu T 100 µ 1m 10 m PW 100 m D = PW T 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Ω Vin 10 V Rev.2.00 Sep 07, 2005 page 5 of 7 VDD . =. 30 V Vout td (on) 10% 10% 90% tr 10% 90% td (off) tf 2SK1636(L), 2SK1636(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.2.00 Sep 07, 2005 page 6 of 7 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 SC-83 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.86 +– 0.1 JEITA Package Code Unit: mm 2.2 2SK1636(L), 2SK1636(S) Ordering Information Part Name 2SK1636L-E 2SK1636STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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