2SK1880(L), 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 600 Unit V VGSS ID ±30 1.5 V A ID(pulse)* IDR 3.0 1.5 A A 2 Gate to source voltage Drain current 1 Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Pch* Tch 20 150 W Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Tstg –55 to +150 °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 600 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 2.0 — — 100 3.0 µA V VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) — 6.5 8.0 Ω ID = 1 A, VGS = 10 V* |yfs| 0.85 1.4 — S ID = 1 A, VDS = 20 V* Input capacitance Output capacitance Ciss Coss — — 250 55 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 8 10 — — pF ns tr 25 35 — — ns ns Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 30 0.95 — — ns V trr — 350 — µs Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 7 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 1 A, VGS = 10 V, RL = 30 Ω IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 100 A/µs 2SK1880(L), 2SK1880(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 0.3 1 3 10 300 1000 2.0 10 V Drain Current ID (A) Pulse Test 4.5 V 4V 0.8 VGS = 3.5 V 10 20 30 40 1.6 Pulse Test VDS = 20 V 1.2 0.8 75°C Tc = 25°C –25°C 0.4 0 50 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 I D = 1.5 A 12 8 1A 4 0.5 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Ta = 25°C Typical Transfer Characteristics 0.4 Drain to Source Saturation Voltage VDS (on) (V) ) 25 °C ) Typical Output Characteristics 1.2 0 = Drain to Source Voltage VDS (V) 5V 0 (T c Case Temperature TC (°C) 2.0 1.6 0.01 0.1 150 s ot 100 O pe ra tio n sh 50 0 m s s (1 0.03 DC µ s m 0.1 1 0µ 10 10 1 0.3 10 10 O a pe by rea rat R is ion li i D S ( mi n t on ted his ) 20 3 = Drain Current ID (A) 10 PW Channel Dissipation Pch (W) 30 100 50 Pulse Test 20 10 VGS = 10 V 5 2 1 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 20 16 12 ID = 1 A 8 0.5 A 4 –40 0 40 80 120 160 5 Pulse Test V DS = 20 V 2 Tc = –25°C 1 0.5 75°C 25°C 0.2 0.1 0.05 0.02 0.05 0.1 1 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 Capacitance C (pF) 1000 500 200 2 VGS = 0 f = 1 MHz Ciss 100 Coss 10 100 Crss 1 0.2 0.5 1 2 5 0 10 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS I D = 1.5 A 16 800 VDD = 100 V 250 V 400 V 600 VDS 12 8 VDD = 100 V 250 V 400 V 200 4 8 12 4 16 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 20 500 Switching Time t (ns) 20 1000 0 0.5 Drain Current ID (A) di/dt = 100 A/µs VGS = 0 Ta = 25°C Pulse Test 2000 400 0.2 Case Temperature TC (°C) 5000 50 0.1 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature Gate to Source Voltage VGS (V) Reverse Recovery Time t rr (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1880(L), 2SK1880(S) VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % 200 100 td(off) 50 tf 20 tr td(on) 10 5 0.1 0.2 0.5 1 2 5 Drain Current ID (A) 10 2SK1880(L), 2SK1880(S) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test 1.6 1.2 0.8 VGS = 10 V 0.4 0 0 V, –5 V 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.05 0.1 0.02 0.03 0.01 10 µ 1s hot Pul θ ch – c(t) = γ s(t)• θ ch – c θ ch – c = 6.25°C / W. Tc = 25°C PW D= T P DM se 0.01 T 100 µ Rev.2.00 Sep 07, 2005 page 5 of 7 1m 10 m Pulse Width PW (S) 100 m PW 1 10 2SK1880(L), 2SK1880(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V 0.42g 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.55 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK1880(L), 2SK1880(S) Ordering Information Part Name 2SK1880L-E 2SK1880STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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