2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 3 S 1 2 3 Rev.3.00 Nov 21, 2005 page 1 of 7 2SK1838(L), 2SK1838(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 250 ±30 1 2 1 10 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 250 ±30 Typ — — Max — — Unit V V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance IGSS IDSS VGS(off) |yfs| Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) — — 2.0 0.3 — — — — 0.5 5.5 ±10 50 3.0 — 8.0 µA µA V S Ω VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A *3 ID = 0.5 A, VGS = 10 V *3 — — — — — — — — — 60 30 5 5 6 10 4.5 0.96 160 — — — — — — — — — pF pF pF ns ns ns ns V ns VDS = 10 V, VGS = 0, f = 1 MHz Body to drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 Nov 21, 2005 page 2 of 7 Ciss Coss Crss td(on) tr td(off) tf VDF trr VGS = 10 V, ID = 0.5 A, RL = 60 Ω IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF/dt = 100 A/µs 2SK1838(L), 2SK1838(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 10 C pe ra 1 10 n m s 0 s m tio 0.3 10 s (T c = (1 25 0.1 sh o °C ) t) Operation in this area is limited by R DS (on) Ta = 25°C 50 100 150 0.01 200 1 3 10 30 1000 Typical Output Characteristics Typical Transfer Characteristics 1.0 6V 10 V 0.8 Drain Current ID (A) 5V Pulse Test 0.6 4.5 V 0.4 4V 0.2 Pulse Test V DS = 10 V 0.8 0.6 0.4 0.2 25°C Tc = 75°C V GS = 3.5 V 2 4 6 – 25°C 8 10 0 2 4 6 8 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 4 3 0.5 A 2 0.2 A 1 ID = 0.1 A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.3.00 Nov 21, 2005 page 3 of 7 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (V) 5 0 300 Drain to Source Voltage VDS (V) 8V 0 100 Case Temperature TC (°C) 1.0 Drain to Source Saturation Voltage VDS (on) (V) = 0.03 0 Drain Current ID (A) O µ 5 PW D 1 s 10 3 µ Drain Current ID (A) 15 10 Channel Dissipation Pch (W) 20 10 50 20 Pulse Test V GS = 10 V 10 5 2 1 0.5 0.02 0.05 0.1 0.2 0.5 Drain Current ID (A) 1 2 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1838(L), 2SK1838(S) 25 20 Pulse Test V GS = 10 V 15 I D = 0.5 A 10 0.1 A 5 0.2 A 0 – 40 0 40 80 120 160 1 Tc = – 25 C 0.5 25 C 75 C 0.2 0.1 0.05 0.02 0.05 0.1 2 1000 VGS = 0 f = 1 MHz Capacitance C (pF) 100 50 di / dt = 100 A / µ s V GS = 0, Ta = 25 C 100 Ciss Coss 10 20 Crss 10 0.05 0.1 0.2 0.5 1 2 1 5 0 10 20 30 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 I D = 0.5 A 16 V GS 12 300 VDD = 200 V 100 V V DS 8 50 V 100 4 VDD = 200 V 100 V 50 V 0 4 8 12 16 Gate Charge Qg (nc) Rev.3.00 Nov 21, 2005 page 4 of 7 20 50 100 VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % 50 Switching Time t (ns) 500 0 1 Typical Capacitance vs. Drain to Source Voltage 200 200 0.5 Body to Drain Diode Reverse Recovery Time 500 400 0.2 Drain Current ID (A) Gate to Source Voltage VGS (V) Reverse Recovery Time t rr (ns) Pulse Test VDS = 10 V 2 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 5 20 tf td (off) 10 5 td (on) tr 2 1 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 2SK1838(L), 2SK1838(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 1.0 Pulse Test 0.8 0.6 0.4 0.2 VGS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.05 0.1 0.02 0.03 1s hot Pul θ ch – c(t) = γ s(t) • θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C PW D= T P DM se 0.01 0.01 10 µ T 100 µ 1m 100 m 10 m PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90 % Vout Monitor Vin D.U.T RL Vin 10 V 50 Ω Rev.3.00 Nov 21, 2005 page 5 of 7 . V DD =. 30 V Vout 10 % 10 % 90 % td (on) tr 10 % 90 % td (off) tf 2SK1838(L), 2SK1838(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V 0.42g 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 16.2 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.3.00 Nov 21, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.55 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK1838(L), 2SK1838(S) Ordering Information Part Name 2SK1838L-E 2SK1838STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Nov 21, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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