RJK1525DPJ, RJK1525DPE, RJK1525DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0623-0100 Rev.1.00 Apr.22,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 2 4 4 1 1 2 1 3 RJK1525DPE 3 2 3 RJK1525DPF RJK1525DPJ D 1. Gate 2. Drain 3. Source 4. Drain G S Rev.1.00, Apr.22.2005, page 1 of 7 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) RJK1525DPJ, RJK1525DPE, RJK1525DPF Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Ratings 150 ±30 25 50 25 50 17 21.6 75 1.67 150 –55 to +150 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Unit V V A A A A A mJ W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Rev.1.00, Apr.22.2005, page 2 of 7 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 150 — — 3.0 7 — Typ — — — — 12 0.093 Max — 1 ±0.1 4.5 — 0.110 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr — — — — — — — — — — — — 680 150 22 22 110 45 12 18 4.5 9 0.95 100 — — — — — — — — — — 1.50 — pF pF pF ns ns ns ns nC nC nC V ns Qrr — 0.4 — µC Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VDS = 10 V Note4 ID = 12.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 12.5 A VGS = 10 V RL = 6 Ω Rg = 10 Ω VDD = 120 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 diF/dt = 100 A/µs RJK1525DPJ, RJK1525DPE, RJK1525DPF Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Ta = 25°C 300 100 ID (A) 75 30 1m 10 Drain Current Channel Dissipation Pch (W) 100 50 25 3 Operation in this RDS(on) 0.3 DC Operation (Tc = 25°C) PW = 10 ms (1shot) 0.03 0.01 50 100 150 Case Temperature 1 200 Tc (°C) Typical Output Characteristics 20 6.5 V 7V VDS = 10 V Pulse Test Pulse Test 6V 12 8 5.5 V 4 ID (A) 16 10 V Drain Current 16 ID (A) 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 20 Drain Current s 10 µ 0µ s s 1 area is limited by 0.1 0 10 VGS = 5 V 12 8 Tc = 75°C 4 25°C −25°C 0 4 8 12 Drain to Source Voltage 0 16 20 VDS (V) Drain to Source Saturation Voltage VDS(on) (V) 8 Pulse Test 6 4 ID = 25 A 2 12.5 A 8.5 A 0 4 8 12 Gate to Source Voltage Rev.1.00, Apr.22.2005, page 3 of 7 16 VGS (V) 20 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2 4 6 Gate to Source Voltage 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 Drain Current 100 300 ID (A) 1000 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.5 VGS = 10 V Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) RJK1525DPJ, RJK1525DPE, RJK1525DPF 0.4 0.3 0.2 ID = 25 A 12.5 A 0.1 8.5 A 0 −25 0 25 50 75 Case Temperature 100 125 150 100 30 Tc = −25°C 10 3 25°C 1 75°C 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 Tc (°C) 100000 500 30000 200 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 1000 Ciss 300 100 Coss 30 Crss 0 8 60 4 VDD = 120 V 60 V 30 V 0 4 8 Gate Charge Rev.1.00, Apr.22.2005, page 4 of 7 12 16 Qg (nC) 0 20 VGS (V) Switching Time t (ns) VDS 12 Gate to Source Voltage 120 VGS 100 150 VDS (V) Switching Characteristics 1000 16 ID = 25 A 50 Drain to Source Voltage Dynamic Input Characteristics 240 VDD = 30 V 60 V 120 V 100 3000 3 10 30 100 300 1000 Reverse Drain Current IDR (A) 180 30 ID (A) 10 1 VDS (V) 10 Typical Capacitance vs. Drain to Source Voltage 1 Drain to Source Voltage 3 Drain Current Body-Drain Diode Reverse Recovery Time 2 1 VGS = 10 V, VDD = 75 V PW = 5 µs, duty < 1 % RG = 10 Ω tr tf 100 td(off) td(on) 10 tr 1 0.1 tf 0.3 1 3 Drain Current 10 30 ID (A) 100 RJK1525DPJ, RJK1525DPE, RJK1525DPF Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 50 40 30 20 VGS = 0 V 10 10 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 VDS = 10 V ID = 10 mA 4 1 mA 3 2 0.1 mA 1 0 -25 2.0 0 VSD (V) 25 50 75 Case Temperature 100 125 150 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 0.3 D=1 0.5 0.2 0.1 0.03 0.01 0.1 0.05 0.02 1 0.0 ulse p ot h 1s θch – c(t) = γs (t) • θch – c θch – c = 1.67°C/W, Tc = 25°C PDM D= PW T PW 0.003 T 0.001 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin V DD = 75 V Vout 10% 10% 90% td(on) Rev.1.00, Apr.22.2005, page 5 of 7 tr 10% 90% td(off) tf RJK1525DPJ, RJK1525DPE, RJK1525DPF Package Dimensions • RJK1525DPJ JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g (1.4) 4.44 ± 0.2 10.2 ± 0.3 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 Unit: mm 0.4 ± 0.1 • RJK1525DPE SC-83 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.1.00, Apr.22.2005, page 6 of 7 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 JEITA Package Code 2.2 RJK1525DPJ, RJK1525DPE, RJK1525DPF • RJK1525DPF RENESAS Code Package Name PRSS0004AE-C LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] Unit: mm 1.35g (1.4) 4.44 ± 0.2 7.8 6.6 (2.3) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 1.7 JEITA Package Code 2.2 1.37 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name RJK1525DPE-LE Quantity 1000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Apr.22.2005, page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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