2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SJ76 Value –140 2SJ77 2SJ78 –160 –180 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Unit V VGSS –200 ±15 V ID IDR –500 –500 mA mA Pch Note 1 Pch 1.75 30 W W Tch Tstg 150 –45 to +150 °C °C 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Min –140 Typ — Max — Unit V 2SJ77 2SJ78 –160 –180 — — — — V V 2SJ79 Gate to source breakdown voltage V (BR) GSS –200 ±15 — — — — V V IG = ±10 µA, VDS = 0 VGS (on) VDS (sat) –0.2 — — — –1.5 –2.0 V V ID = –10 mA, VDS = –10 V Note 2 ID = –10 mA, VGS = 0 Note 2 Forward transfer admittance Input capacitance |yfs| Ciss 20 — 35 120 — — mS pF Note 2 Reverse transfer capacitance Crss — 4.8 — pF ID = –10 mA, VDS = –20 V VDS = –10 V, ID = –10 mA, f = 1 MHz 2SJ76 Gate to source cutoff voltage Drain to source saturation voltage Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 Symbol V (BR) DSX Test Conditions VGS = 2 V, ID = –1 mA 2SJ76, 2SJ77, 2SJ78, 2SJ79 Main Characteristics Power vs. Temperature Derating Typical Output Characteristics –500 ID (mA) Pch (W) 60 Drain Current Channel Dissipation 40 20 –4.0 –400 –3.5 –3.0 –300 –2.5 –200 –2.0 –1.5 –100 0 50 0 150 100 Case Temperature 0 Tc (°C) –4 –0.8 –0.7 –30 –0.6 –20 –0.5 –0.4 –0.2 0 0 –20 –40 –60 –0.3 –80 Drain to Source Voltage ID (mA) –40 VGS = –0.1 V –300 Tc = –25°C 25°C 75°C –20 0 0 –0.4 –0.8 –1.2 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 5 –1.6 –2.0 VGS (V) 0 –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (mS) –80 25°C 75°C –100 VDS (V) VDS = –20 V Tc = –25°C –200 0 –100 –100 –40 VDS (V) –400 Typical Transfer Characteristics –60 –20 VDS = –20 V –0.9 –10 –16 –500 –1.0 Tc = 25°C –12 Typical Transfer Characteristics Drain Current Drain Current ID (mA) –50 –8 Drain to Source Voltage Typical Output Characteristics ID (mA) –1.0 VGS = –0.5 V 0 Drain Current –4.5 Tc = 25°C 200 100 50 20 10 5 2 –2 Tc = 25°C VDS = –20 V –5 –10 –20 –50 –100 –200 Drain Current ID (mA) 2SJ76, 2SJ77, 2SJ78, 2SJ79 Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance vs. Frequency 500 100 10 1 0.1 0.05 5 k10 k Tc = 25°C VDS = –20 V ID = –10 mA 100 k 1M Frequency f (Hz) Rev.2.00 Sep 07, 2005 page 4 of 5 10 M 50 M 2SJ76, 2SJ77, 2SJ78, 2SJ79 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name Quantity Shipping Container 2SJ76-E 2SJ77-E 500 pcs 500 pcs Box (Sack) Box (Sack) 2SJ78-E 2SJ79-E 500 pcs 500 pcs Box (Sack) Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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