2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 3 D 2 1 1. Gate 2. Drain 3. Source 4. Drain G 4 S Note: Marking is “TY” *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep. 07, 2005 page 1 of 5 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 60 ±20 2 4 2 1 150 –55 to +150 Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 60 ±20 Typ — — Max — — Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 3. Pulse Test |yfs| Ciss Coss Crss ton toff — — 0.5 — — 1.5 — — — — — — — — 0.4 0.35 1.8 173 85 23 21 85 ±5 5 1.5 0.6 0.45 — — — — — — µA µA V Ω Ω S pF pF pF ns ns VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.3 A, VGS = 3 V*3 ID = 1 A, VGS = 4 V*3 ID = 1 A, VDS = 10 V*3 Rev.2.00 Sep. 07, 2005 page 2 of 5 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, RL = 30 Ω, VGS = 10 V 2SK2315 Main Characteristics Maximum Safe Operation Area 5 1.6 ID (A) 100 µs 1.2 2 PW 1 0.2 Operation in this area is limited by RDS(on) 0.1 0.05 Ta = 25°C 1 shot pulse 0.01 100 150 0.005 0.2 200 0.5 1 2 5 10 20 5 10 V 5V 4V 3.5 V Ta = 25°C Pulse Test ID (A) 4 3V Drain Current 3 2.5 V 2 2V 1 4 Tc = 75°C 25°C –25°C 3 2 1 VDS = 10 V Pulse Test VGS = 1.5 V 2 4 6 8 Drain to Source Voltage 0 10 VDS (V) Pulse Test Ta = 25°C 0.8 0.6 ID = 2 A 0.4 1A 0.2 0.5 A 4 8 12 Gate to Source Voltage Rev.2.00 Sep. 07, 2005 page 3 of 5 16 20 VGS (V) 2 3 4 5 VGS (V) Static Drain to Source State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (Ω) 1.0 1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 VDS (V) Typical Transfer Characteristics 5 0 50 100 200 Drain to Source Voltage Ta ((°C) Typical Output Characteristics ID (A) n io t ra Drain Current s 0.02 50 s m pe 0.4 m 10 O 0.8 Ambient Temperature Drain Current = 0.5 0 Drain to Source Saturation Voltage VDS(on) (V) 1 C D Channel Dissipation Pch** (W) (** on the almina ceramic board) Power vs. Temperature Derating 5 2 Ta = 25° 25°C Pulse Test 1 VGS = 3 V 0.5 10 V 0.2 0.1 0.05 0.1 0.2 0.5 1 Drain Current 2 5 ID (A) 10 Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 ID = 2 A 0.6 VGS = 3 V 0.5 A 1A 0.4 0.2 1A 0.5 A ID = 2 A VGS = 10 V 0 –40 0 40 80 120 Case Temperature Tc Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 2SK2315 160 Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25°C 25°C 75°C 2 1 0.5 VDS = 10 V Pulse Test 0.2 0.1 0.1 0.2 0.5 ((°C) 1 2 5 10 Drain Current ID (A) 100 Coss Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 Drain to Source Voltage 100 40 20 0 tf td(on) 5 VGS = 10 V, PW = 2 µs VDD = 30 V, duty < 1 % 0.2 0.5 Drain Current Rev.2.00 Sep. 07, 2005 page 4 of 5 1 2 ID (A) 2 4 8 4 VDD = 50 V 25 V 10 V 6 Gate Charge Reverse Drain Current IDR (A) Switching Time t (ns) td(off) 0.1 ID = 2 A 8 0 10 Qg (nc) Reverse Drain Current vs. Source to Drain Voltage 50 2 0.05 12 VDS VDS (V) 100 tr 16 60 50 200 10 20 VGS VDD = 50 V 25 V 10 V 80 Switching Characteristics 20 Dynamic Input Characteristics 5 5 Pulse Test 4 3 10 V 2 5V VGS = 0 1 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Gate to Source Voltage VDS (V) Ciss Drain to Source Voltage Capacitance C (pF) 1000 VGS (V) Typical Capacitance vs. Drain to Source Voltage 2SK2315 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep. 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. placement of substitutive, auxiliary Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's Technology Corp. or a third party. application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas T 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of i improvements or other reasons. It is publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvement distributor for the latest product therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or o errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor Techn home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to a evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life ci is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a aerospace, nuclear, or undersea repeater product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. materi 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and lic cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network"" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0