Transistors SMD Type PNP Transistors 2SB1386 Features 1.70 Low VCE(sat). 0.1 VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -5 A Collector current ICP * -10 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current(Pulse) * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50 u A -30 Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage BVEBO IE=-50 u A -6 V Collector cutoff current ICBO VCB=-20V -0.5 uA Emitter cutoff current IEBO VEB=-5V -0.5 uA -1 V DC current transfer ratio VCE(sat) IC=-4A,IB=-0.1A V 0.35 Collector-emitter saturation voltage hFE VCE=-2V, IC=-0.5A 82 390 Output capacitance Cob VCE=-6V, IE=50mA, f=30MHz 120 pF Transition frequency fT VCB=-20V, IE=0A, f=1MHz 60 MHz hFE Classification Type 2SB1386-P 2SB1386-Q 2SB1386-R Range 82-180 120-270 180-390 Marking BHP* BHQ* BHR* www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1386 ■ Typical Characterisitics - 0.2 - 0.4 0 0.6 - 0.8 -1.0 -1.2 Fig.1 0 VCE 0.8 1.2 Fig.2 DC CURRENT GAIN : hFE 1k 500 200 Ta= 100° C 25° C - 25°C 100 50 20 1k 500 200 20 10 10 5 5 2m -5m -0.01-0.02 0.05- 0.1 -0.2 - 0.5 -1 -2 - 5 -10 -1m -2m -5m - 0.01- 0.02 -0.05 -0.1 -0.2 -0.5 -1 - 2 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) lC/lB=10 -2 -1 -0.5 -0.2 Ta= 100° C -0.05 25° C -25° C -0.02 -0.01 - 2m - 5m - 0.01- 0.02 - 0.05 - 0.1 -0.2 - 0.5 -1 - 2 - 5 10 -5 Collector-emitter saturation voltage vs. collector current ( ) www.kexin.com.cn - 1m -2m - 5m -0.01 -0.02 -0.05 -0.1 -1 Ta= 100° C 25° C - 0.2 - 0.05 -25° C - 0.02 - 0.01 - 2m -5m - 0.01 -0.02 - 0.05 - 0.1 - 0.2 - 0.5 - 1 - 2 - 5 -10 -0.5 - 1 - 2 - 5 -10 DC current gain vs. collector current ( ) -5 Ta=25° C -2 -1 -0.5 -0.2 -0.1 -0.05 IC/IB=50/1 40/1 /1 30/1 10/1 -0.02 -0.01 -2m -5m 0.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 10 Collector-emitter saturation voltage vs. collector current ( Collector-emitter saturation voltage vs. collector current ( ) -5 lC/lB=40 -2 - 25° C -1 25° C - 0.5 - 0.2 - 0.1 - 0.05 Ta= 100° C - 0.02 - 0.01 - 2m 5m - 0.01- 0.02 - 0.05 - 0.1 - 0.2 - 0.5 - 1 - 2 - 5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.8 0.2 COLLECTOR CURRENT : IC (A) Fig.6 lC/lB=30 - 0.5 - 0.1 20 COLLECTOR CURRENT : IC (A) -2 COLLECTOR CURRENT : IC (A) Fig.7 - 5 -10 COLLECTOR CURRENT : IC (A) -5 -0.1 Ta= 100° C 25° C -25° C 50 50 Fig.3 VCE= - 2V 100 - 2V - 1V 100 Grounded emitter output characteristics 5k - 1V VCE= - 5V 200 5 - 2.0 1.6 2k -1m 2 - 0.4 1k 500 10 IB=0A COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE - 5mA -1 0 2k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10mA 2 Ta=25° C 2k -15mA Grounded emitter propagation characteristics 5k 5k Ta=25° C -3 1.4 BASE TO EMITTER VOLTAGE : VBE (V) A -30m mA - 25 - 20mA DC CURRENT GAIN : hFE - 200m -100m - 50m - 20m -10m - 5m - 2m - 1m Ta= 100° C -25°C 25° C - 5 - 50mA - 45mA - 40mA - 4 - 35mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) -2 -1 - 500m COLLECTOR CURRENT : IC (A) VCE= - 2V -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) Transistors SMD Type PNP Transistors 2SB1386 1 000 lC/lB=50 -2 - 25° C 25° C Ta= 100° C -1 - 0.5 - 0.2 - 0.1 - 0.05 - 0.02 - 0.01 -2m 5m -0.01 - 0.02 - 0.05 -0.1 -0.2 - 0.5 - 1 - 2 Ta= 25° C VCE - 6V 500 200 100 - 5 - 10 50 20 10 5 2 1 1 COLLECTOR CURRENT : IC (A) 20 10 - 0.1 - 0.2 0.5 -1 -2 - 5 -10 -20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage 5 2 s COLLECTOR CURRENT : IC (A) 50 ms EMITTER INTPUT CAPACITANCE : Cib (pF) 100 0m -10 200 =1 -5 10 1 500m Ta= 25° C f= 1MHz IE= 0A 500 Pw -2 20 DC 20 -1 500 1000 1000 Ta=25° C *Single nonrepetitive pulse 00 50 - 0.5 50 100 200 Fig.11 Gain bandwidth product vs. emitter current =1 Pw 100 - 0.2 20 50 200 10 - 0.1 10 100 Ta= 25° C f= 1MHz IC= 0A 500 5 EMITTER CURRENT : IE (mA) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) 1000 2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) ■ Typical Characterisitics 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : - VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area www.kexin.com.cn 3