Transistors SMD Type SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3 A Collector power dissipation PC 0.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW=100ms Electrical Characteristics Ta = 25 Parameter Symbol Test C onditi ons Min Typ Max Unit Collector-base breakdown voltae BVCBO IC = -50 uA -40 V Collector-emitter breakdown voltage BVCEO IC = -1mA -32 V Emitter-base breakdown voltage BVEBO IE = -50 A -5 V ICBO VCB = -20V IEBO VEB = -4V Collector cutoff current Emitter cutoff current VCE(sat) IC = -2A , IB = -0.2A Collector-Emitter Saturation Voltage -0.5 82 -1 uA -1 uA -0.8 V DC current transfer ratio hFE VCE = -3V , IC = -0.5A 390 Output Capacitance Cob VCB = -10V , IE = 0, f = 1MHz 50 pF Transition frequency fT VCE = -5V , IE = 0.5A , f = 30MHz 100 MHz hFE Classification Type 2SB1188-P 2SB1188-Q 2SB1188-R Range 82-180 120-270 180-390 Marking BCP* BCQ* BCR* www.kexin.com.cn 1 Transistors SMD Type PNP Transistor 2SB1188 ■ Typical Characterisitics COLLECTOR CURRENT : IC (A) −100 −50 −20 −10 −5 −2 −1 BASE TO EMITTER VOLTAGE : VBE (V) −1.75mA −1.5mA −0.3 −1.25mA −1mA −0.2 −750µ A −500µA −0.1 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 −2mA −0.4 DC CURRENT GAIN : hFE 200 100 50 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 0 −0.4 −1 IC /IB=10 −0.5 −0.2 −0.1 −0.05 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLETOR CURRENT : IC (mA) Fig.7 Base-emitter saturation voltage vs. collector current 2 www.kexin.com.cn 50 −0.8 −1.2 IB=0A −1.6 −2 20 −5 −10 −20 C −500 Ta=25° −200 −100 IC/IB= 50 −50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 Fig.3 DC current gain vs. collector curren ( ) −500 lC/lB=10 −200 −100 Ta=100° C 25° C −40° C −50 −20 −5 −10 −20 Ta= 25° C VCE= −5V 200 100 50 5 10 20 50 100 200 500 1000 2000 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 500 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat)(V) Ta=25° C 100 Fig.2 Grounded emitter output characteristics COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 200 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE= −3V Ta=100° C 25° C −25° C VCE= −6V −3V −1V −250µA Fig.1 Grounded emitter propagation characteristics 500 Ta=25° C 500 −2.25mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −200 −2.5mA Ta=25° C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) C −1000 Ta=100° 25° C −500 −40° C DC CURRENT GAIN : hFE −0.5 VCE= −3V 300 Ta= 25° C f= 1MHz IE= 0A IC= 0A Cib 200 100 Cob 50 20 10 −0.5 −1 −2 −5 −10 −20 −30 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Transistors SMD Type PNP Transistor 2SB1188 ■ Typical Characterisitics IC Max. (pulse) −2 s 0m =1 Pw s m 00 =1 Pw COLLECTOR CURRENT : IC (A) −5 −1 −0.5 D C −0.2 −0.1 −0.05 Ta=25° C Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area www.kexin.com.cn 3