RENESAS 2SJ529

2SJ529(L), 2SJ529(S)
Silicon P Channel MOS FET
REJ03G0879-0300
(Previous: ADE-208-654A)
Rev.3.00
Sep 07, 2005
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.12 Ω typ.
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
4
D
1
1
2
3
Rev.3.00 Sep 07, 2005 page 1 of 8
2
3
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ529(L), 2SJ529(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–60
Unit
V
VGSS
ID
±20
–10
V
A
–40
–10
A
A
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
–10
8.5
A
mJ
Channel dissipation
Channel temperature
Pch
Tch
Note 2
20
150
W
°C
–55 to +150
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
–60
±20
—
—
—
—
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IDSS
IGSS
—
—
—
—
–10
±10
µA
µA
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
–1.0
—
—
0.12
–2.0
0.16
V
Ω
ID = –1 mA, VDS = –10 V
Note 4
ID = –5 A, VGS = –10 V
Static drain to source on state resistance
Forward transfer admittance
RDS (on)
|yfs|
—
4.5
0.17
7.5
0.24
—
Ω
S
ID = –5 A, VGS = –4 V
Note 4
ID = –5 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
580
300
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
85
10
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
Rise time
Turn-off delay time
tr
td (off)
—
—
40
85
—
—
ns
ns
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
60
–1.2
—
—
ns
V
trr
—
60
—
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Body to drain diode reverse recovery time
Note:
4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 8
Test Conditions
Note 4
VGS = –10 V
ID = –5 A
RL = 6 Ω
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0
diF/dt = 50 A/µs
2SJ529(L), 2SJ529(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–100
ID (A)
Drain Current
20
10
0
0
50
100
150
Case Temperature
–3
–1
–0.3
Tc (°C)
–3.5 V
–4 V
Pulse Test
–100
VDS (V)
–8
–6
–3 V
–4
–2.5 V
–2
–4
25°C
–2
Tc = 75°C
VGS = –2 V
0
–2
–4
–6
Drain to Source Voltage
–25°C
0
–10
–8
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
ID = –5 A
–0.6
–0.4
–2 A
–0.2
–1 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.3.00 Sep 07, 2005 page 3 of 8
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
VDS (V)
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
–30
VDS = –10 V
Pulse Test
Drain Current
Drain Current
–10
–10
–10 V
–5 V
–6
0
10
Typical Transfer Characteristics
ID (A)
ID (A)
–8
–3
=
Drain to Source Voltage
Typical Output Characteristics
–10
1
m
s
O
m
pe
s
ra
(1
tio
sh
n
ot
(T
)
c=
25
°C
Operation in
)
this area is
limited by RDS (on)
DC
–10
Ta = 25°C
–0.1
–0.1 –0.3
–1
200
PW
µs
30
0
Channel Dissipation
10 µs
–30
10
Pch (W)
40
1
0.5
0.2
VGS = –4 V
0.1
–10 V
0.05
0.02
Pulse Test
0.01
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
2SJ529(L), 2SJ529(S)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
–2 A
0.3
ID = –5 A
VGS = –4 V
–1 A
0.2
0.1
–1 A, –2 A
–5 A
–10 V
0
–40
0
40
80
Case Temperature
120
160
20
10
5
0.5
VDS = –10 V
Pulse Test
0.2
–0.1 –0.2
–0.5
–1
–2
–5
–10
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
2000
Pulse Test
1000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
75°C
1
Tc (°C)
500
100
50
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
5
–0.1 –0.2
–0.5
–1
–2
Reverse Drain Current
–5
200
100
50
Coss
IDR (A)
–12
VDD = –10 V
–25 V
–50 V
–80
–16
–100
0
8
16
Gate Charge
Rev.3.00 Sep 07, 2005 page 4 of 8
24
32
Qg (nc)
–40
–50
–20
40
VGS (V)
1000
Switching Time t (ns)
VGS
–60
Gate to Source Voltage
–4
–8
VDS
–30
Switching Characteristics
ID = –10 A
–40
–20
Drain to Source Voltage VDS (V)
0
–20
Crss
20 VGS = 0
f = 1 MHz
10
0
–10
–10
0
VDD = –10 V
–25 V
–50 V
Ciss
500
Dynamic Input Characteristics
VDS (V)
25°C
2
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
Tc = –25°C
300
td(off)
100
tf
30
tr
td(on)
10
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
1
–0.1 –0.2
–0.5
–1
Drain Current
–2
ID (A)
–5
–10
2SJ529(L), 2SJ529(S)
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–10
Pulse Test
–8
–10 V
–6
–5 V
–4
VGS = 0, 5 V
–2
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
20
IAP = –10 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
0.05
0.02
D=
PDM
1
e
0.0
uls
tp
o
h
1s
0.03
0.01
10 µ
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
Rev.3.00 Sep 07, 2005 page 5 of 8
VDD
2SJ529(L), 2SJ529(S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.3.00 Sep 07, 2005 page 6 of 8
10%
tr
10%
td(off)
tf
2SJ529(L), 2SJ529(S)
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
Unit: mm
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
RENESAS Code
Package Name
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.3.00 Sep 07, 2005 page 7 of 8
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2SJ529(L), 2SJ529(S)
Ordering Information
Part Name
2SJ529L-E
2SJ529STL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 8 of 8
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Colophon .3.0