JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5287 TO – 3P TRANSISTOR (NPN) 1. BASE FEATURES z High Breakdown Voltage z High Speed Switching 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Regulator and General Purpose Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 A PC Collector Power Dissipation TC=25℃ 80 W Thermal Resistance From Junction To Ambient 42 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC=1mA,IE=0 900 V IC=10mA,IB=0 550 V IE=1mA,IC=0 7 V Collector cut-off current ICBO VCB=800V,IE=0 100 μA Emitter cut-off current IEBO VEB=7V,IC=0 100 μA DC current gain hFE * VCE=4V, IC=1.8A 10 25 Collector-emitter saturation voltage * VCE(sat) IC=1.8A,IB=0.36A 0.5 V Base-emitter saturation voltage * VBE (sat) IC=1.8A,IB=0.36A 1.2 V Collector output capacitance Transition frequency Cob fT VCB=10V,IE=0, f=1MHz 50 pF VCE=12V,IC=0.35A 6 MHz *Pulse test A,Dec,2010