KTC4076 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity Complementary to KTA2015 SOT–323 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 100 mW Thermal Resistance From Junction To Ambient 1250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 70 hFE(2) VCE=6V, IC=400mA 25 DC current gain VCE(sat) Collector-emitter saturation voltage IC=100mA, IB=10mA Base-emitter voltage VBE VCE=1V, IC=100mA Transition frequency fT VCB=6V,IC=20mA , Cob Collector output capacitance 240 VCB=6V, IE=0, f=1MHz 0.25 V 1 V 300 MHz 7 pF CLASSIFICATION OF hFE(1), hFE(2) RANK RANG MARKING O Y hFE(1) 70–140 120–240 hFE(2) 25Min 40Min WO WY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５