JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR (NPN) FEATURES SOT–323 High DC Current Gain Complementary to 2SB1218A Low Collector to Emitter Saturation Voltage APPLICATIONS General Purpose Amplification 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current 100 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 7 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=10V, IB=0 100 µA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 µA hFE(1) VCE=10V, IC=2mA 160 hFE(2) VCE=2V, IC=0.1A 90 DC current gain VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 460 IC=100mA, IB=10mA 0.3 V VCE=10V,IC=2mA , f=200MHz 150 MHz VCB=10V, IE=0, f=1MHz 3.5 pF CLASSIFICATION OF hFE(1) RANK Q R S RANGE 160–260 210–340 290–460 MARKING ZQ ZR ZS A,Oct,2010