JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR (PNP) 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:A H, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Unit V V Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA B,May,2011 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage T est conditions IC=-100µA,IE=0 V(BR)CBO V(BR)CEO* IC=-10mA,IB=0 Min BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Typ Max Unit V V V(BR)EBO IE=-100µA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1)* VCE=-2V, IC=-5mA 63 hFE(2)* VCE=-2V, IC=-150mA 63 hFE(3)* VCE=-2V, IC=-0.5A 40 VCE(sat)* IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE* VCE=-2V, IC=-0.5A -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage -5 VCE=-5V,IC=-10mA, f=100MHz V 250 50 MHz * Pulse Test CLASSIFICATION OF hFE(2) BCX51 BCX51-10 BCX51-16 RANK BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 RANGE 63–250 63–160 100–250 B,May,2011