TO-92 Plastic-Encapsulate Transistors 2SA1625

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA1625
TRANSISTOR (PNP)
1. EMITTER
FEATURES
z High Voltage
z High Speed Switching
z Low Collector Saturation Voltage
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
-7
V
IC
Collector Current
Emitter-Base Voltage
-500
mA
PC
Collector Power Dissipation
750
mW
Thermal Resistance From Junction To Ambient
166
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-400V,IE=0
-10
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-10
μA
DC current gain
hFE
VCE=-5V, IC=-50mA
40
200
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB=-10mA
-0.5
V
Base-emitter saturation voltage
VBE (sat)
IC=-100mA,IB=-10mA
-1.2
V
20
pF
Cob
Collector output capacitance
fT
Transition frequency
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-10mA
20
MHz
CLASSIFICATION OF hFE
RANK
M
L
K
RANGE
40-80
60-120
100-200
A,Dec,2010