JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KTC1027 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES z Complementary to KTA1023 z High Voltage Applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Power Dissipation 0.75 W Thermal Resistance From Junction To Ambient 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V VCB=120V,IE=0 0.1 μA 0.1 μA Collector cut-off current ICBO Emitter cut-off current IEBO VEB=5V,IC=0 DC current gain hFE VCE=5V, IC=100mA VCE(sat) IC=500mA,IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=500mA 1 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 30 pF Collector-emitter saturation voltage Transition frequency fT VCE=5V,IC=100mA 80 240 120 MHz CLASSIFICATION OF hFE RANK O Y RANGE 80-160 120-240 A,Dec,2010