TO-3P Plastic-Encapsulate Transistors 3CA1943

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
3CA1943
TO – 3P
TRANSISTOR (PNP)
1. BASE
FEATURES
z High Breakdown Voltage
z General Purpose Switching and Amplification
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-15
A
PC
Collector Power Dissipation
3
W
Thermal Resistance From Junction To Ambient
42
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-50mA,IB=0
-120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
ICBO
VCB=-120V,IE=0
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
IEBO
VEB=-5V,IC=0
hFE(1)
VCE=-5V, IC=-1A
55
hFE(2)
*
VCE=-5V, IC=-7A
35
VCE(sat)
IC=-8A,IB=-800mA
fT
VCE=-5V,IC=-1A
-5
μA
-5
μA
160
-3
10
V
MHz
*Pulse test
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
A,Dec,2010