JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature RθJA Thermal Resistance from Junction to Ambient ℃ -55~+150 ℃/W 250 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 100μA , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -160 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-150 V , IE=0 -1 Emitter cut-off current IEBO VEB=-6V, IC=0 -1 DC current gain hFE VCE=-5 V, IC=- 200mA Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA -1.5 V Base-emitter voltage VBE IC= -5 mA, VCE=- 5V -0.75 V Transition frequency fT VCE= -5 V, IC= -200mA 60 μA μA 320 15 MHz CLASSIFICATION OF hFE Rank Range R O Y 60-120 100-200 160-320 A,Mar,2011