PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 – 2690 MHz Description The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Features Single-carrier WCDMA Drive-up • Broadband internal input and output matching VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 75 Efficiency 20 50 16 25 Gain 12 8 0 Efficiency (%) Peak/Average Ratio, Gain (dB) 24 -25 PAR @ 0.01% CCDF • Typical pulsed performance in a Doherty configuration, at 39.5 dB POUT, 2690 MHz, 28 V, with pulse 10 µs, 10% DC - Gain = 16dB - Efficiency = 45% • Integrated ESD protection • Pb-free and RoHS compliant • Capable of handling 10:1 VSWR @28 V, 50 W (CW) output power -50 4 0 • Asymmetrical Doherty design - Main: 25 W Typ (P1dB) - Peak: 50 W Typ (P1dB) 27 31 35 39 43 pxfc260622sc_g1 47 -75 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (device tested in Infineon Doherty test fixture with straight leads) VDD = 28 V, IDQ = 115 mA, POUT = 8.9 W avg, ƒ1 = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.8 — dB Drain Efficiency hD 40 42 — % Adjancent Channel Power Ratio ACPR — –30 –27 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.50 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.25 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 115 mA VGS 2.0 2.6 3.0 V VDS = 28 V, IDQ = 0 A VGS — 1.4 — V (peak) Maximum Ratings Parameter Symbol Value Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Unit Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 55 W CW) RqJC 0.962 °C/W Thermal Resistance (peak, TCASE = 70°C, 55 W CW) RqJC 0.499 °C/W Ordering Information Type and Version Order Code Package Description Shipping PXAC260622SC V1 R250 PXAC260622SCV1R250XTMA1 H-37248H-4, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Typical Performance (data taken in a production test fixture) Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz 70 -20 60 -30 50 -40 40 -50 30 ACPU ACPL Efficiency -70 27 31 35 39 43 20 pxfc260622sc_g2 47 -25 -30 -40 10 2495MHz ACPL 2495MHz ACPU 2570MHz ACPL 2570MHz ACPU 2690MHz ACPL 2690MHz ACPU -35 28 32 Average Output Power (dBm) 44 pxfc260622sc_g3 48 CW Performance at various VDD VDD = 28 V, IDQ = 115mA IDQ = 115 mA, ƒ = 2690 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff 70 70 22 20 60 20 18 50 18 50 16 40 16 40 14 30 14 30 Gain 12 10 29 33 37 41 45 pxfc260622sc_g4 49 53 Gain (dB) Efficiency Efficiency (%) 22 Gain (dB) 40 Output Power (dBm) CW Performance 2495MHz Gain 2570MHz Gain 2690MHz Gain 2495MHz Eff 2570MHz Eff 2690MHz Eff 36 20 12 10 10 60 Gain 27 31 35 39 pxfc260622sc_g5 43 47 20 51 10 Output Power (dBm) Output Power (dBm) Data Sheet Efficiency Efficiency (%) -60 -20 ACP Up & Low (dBc) -10 Efficiency(%) ACP Up & Low (dBc) VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 3 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Typical Performance (cont.) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 115 mA -6 18 Gain (dB) Gain -10 16 14 -14 IRL 12 -18 10 -22 8 2300 2400 2500 2600 2700 Input Return Loss (dB) -2 20 -26 2900 pxfc260622sc_g6 2800 Frequency (MHz) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 115 mA P1dB Max Output Power Max Drain Efficiency hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 27.1 55.1 10.9 – j5.9 21.6 43.2 20.8 61.3 44.3 26.7 54.1 9.5 – j6.0 21.4 43.0 20.0 60.4 44.4 27.8 56.0 8.0 – j8.4 20.9 43.3 21.4 61.5 Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] 2496 16.4 – j12.3 9.8 – j12.0 19.8 44.3 2570 18.0 – j11.1 8.9 – j11.8 19.4 2690 18.3 – j 0.1 10.1 – j13.5 19.2 Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, VGSPEAK = 1.4 V , IDQ = 115 mA P1dB Max Output Power Max Drain Efficiency hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 59 59.4 7.8 – j7.1 15.6 46.2 42 67.6 47.4 55 56.8 7.0 – j7.4 15.6 45.7 37 65.5 47.4 55 57.8 6.2 – j10.5 15.1 45.9 38 64.8 Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] 2495 17.6 – j14.7 5.3 – j11.1 14.7 47.7 2570 19.7 – j11.1 6.2 – j13.2 15.5 2690 19.0 – j0.5 6.1 – j15.1 14.1 Data Sheet 4 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Reference Circuit , 2496 – 2690 MHz MEGTRON6_20 MIL (61) MEGTRON6, 0.508 (105) VDD VGSPEAK C210 C107 C209 C111 C112 C106 C201 C105 C205 C206 C207 C208 C101 R101 C220 C102 R103 RF_ IN C202 U1 RF_ OUT C221 C111 C103 C203 C222 C204 C104 C213 C214 C215 R102 C108 VGSMAIN C109 C216 C110 C217 VDD C218 C219 PXAC260622SC_OUT_05 PXAC260622SC_IN_05A p x a c 2 6 0 6 2 2 s c _ C D _ 0 4 - 0 6 - 2 0 1 5 Reference circuit assembly diagram (not to scale) Data Sheet 5 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC260622SC V1 Test Fixture Part No. LTA/PXAC260062SC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2496 – 2690 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N C101, C102, C103, C104 Capacitor, 8.2 pF ATC ATC800A8R2JW150XB C105, C106, C107, C108, C109, C110 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C111 Capacitor, 0.5 pF ATC ATC800A0R5CW150XB R101, R102 Resistor, 10 Ω Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 Ω Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C25P1-04S C201, C202, C203, C204 Capacitor, 8.2 pF ATC ATC800A8R2JW150XB C205, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216, C217, C218, C219 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C220 Capacitor, 1.5 pF ATC ATC800A1R5CW150XB C221 Capacitor, 1.0 pF ATC ATC800A1R0CW150XB C222 Capacitor, 0.6 pF ATC ATC800A0R6CW150XB Input Output Pinout Diagram (top view) Peak Main D2 G1 G2 Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (flange) H-34284H-4_gw_pd_10-10-2012 D1 S Lead connections for PXAC260622SC Data Sheet 6 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Package Outline Specifications Package H-37248H-4 with Formed Leads (8.89 [.350]) 2X D 45° x .64 [.025] 1.49±0.25 [.059±.010] (5.08 [.200]) D1 1.00+0.25 -0.10 [.039+.010 -.004 ] D2 9.78 [.385] CL G1 4X R0.51+0.38 -0.13 [ R.020+.015 -.005 ] 14.75±0.50 [.581±.020] CL G2 CL 4X 3.81 [.150] 4X 5°±3° 4X 0.13±0.08 [.005±.003] SPH 2X 12.70 [.500] 3.76±0.25 [.148±.010] 19.81±0.20 [.780±.008] (1.02 [.040]) H-37248H-4_GW_po_02_12-03-2012 20.57 [.810] S DiagramNotes—unlessotherwisespecified: 1. InterpretdimensionsandtolerancesperASMEY14.5M-1994. 2. Primarydimensionsaremm.Alternatedimensionsareinches. 3. Alltolerances±0.127[.005]unlessspecifiedotherwise. 4. Pins:D1,D2–drains;G1,G2–gates;S–source. 5. Leadthickness:0.10+0.051/-0.025mm[.004+0.002/-0.001inch]. 6. Goldplatingthickness:1.14±0.38micron[45±15microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 7 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC V1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-04-03 Advance All Data Sheet reflects advance specification for product development 02 2015-04-06 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, reference circuit, package outline 02.1 2015-06-03 Production 1 Updated single-carrier WCDMA test spec We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-06-03 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02.1, 2015-06-03