2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous: ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS Ratings 450 Unit V VGSS 500 ±30 V ID(pulse)* 7 28 A A Body to drain diode reverse drain current Channel dissipation IDR 2 Pch* 7 35 A W Channel temperature Storage temperature Tch Tstg 150 –55 to +150 °C °C Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Note: ID 1 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V(BR)DSS 450 500 — — V ID = 10 mA, VGS = 0 V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 IDSS — — 250 µA VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — 0.6 3.0 0.8 V Ω ID = 1 mA, VDS = 10 V 3 ID = 4 A, VGS = 10 V * |yfs| — 4.0 0.7 6.5 0.9 — S ID = 4 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss — — 1050 280 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 40 15 — — pF ns tr 55 95 — — ns ns Drain to source breakdown voltage 2SK1566 2SK1567 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1566 2SK1567 Gate to source cutoff voltage Static drain to source on 2SK1566 state resistance 2SK1567 Forward transfer admittance Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 40 0.95 — — ns V trr — 320 — ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions 3 ID = 4 A, VGS = 10 V, RL = 7.5 Ω IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF/dt = 100 A/µs 2SK1566, 2SK1567 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 40 20 10 10 PW D 5 C 100 1 10 m n s (1 (T C 0.5 = Operation in this Area is Limited by RDS (on) 0.2 10 3 Sh ot ) 25 °C ) 2SK1567 2SK1566 Ta = 25°C 1 µs µs m s tio 1 150 = ra 2 0.05 50 0 O pe 0.1 0 100 30 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 7V 6V 16 Drain Current ID (A) Drain Current ID (A) 10 20 Drain Current ID (A) Channel Dissipation Pch (W) 60 Pulse Test 12 5V 8 4 16 –25°C TC = 25°C VDS = 20 V Pulse Test 75°C 12 8 4 VGS = 4 V 10 20 30 40 50 4 2 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 10 A 6 4 5A 2 0 0 ID = 2 A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 5 2 Pulse Test VGS = 10 V 1.0 0.5 15 V 0.2 0.1 0.05 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1566, 2SK1567 2.0 1.6 VGS = 10 V Pulse Test ID = 10 A 1.2 2, 5 A 0.8 0.4 0 –40 0 80 40 120 160 75°C 5 2 1.0 0.5 0.1 0.2 0.5 2 1.0 5 Typical Capacitance vs. Drain to Source Voltage 10 5,000 Capacitance C (pF) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 200 100 VGS = 0 f = 1 MHz Ciss 1,000 Coss 100 Crss 10 5 0.5 1.0 5 2 10 0 20 10 30 20 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 400 16 VDD = 100 V 250 V 400 V VDS 300 12 VGS 200 8 ID = 7 A 100 4 VDD = 400 V 250 V 100 V 0 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 40 50 500 • VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • Switching Time t (ns) 20 500 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) TC = 25°C 10 Body to Drain Diode Reverse Recovery Time 500 0 –25°C Drain Current ID (A) 1,000 50 0.2 VDS = 20 V Pulse Test 20 Case Temperature TC (°C) 5,000 2,000 50 200 td (off) 100 50 tf tr 20 td (on) 10 5 0.2 0.5 1.0 2 5 Drain Current ID (A) 10 20 2SK1566, 2SK1567 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 16 Pulse Test 12 8 4 5, 10 V VGS = 0, –10 V 0.4 0 0.8 1.2 2.0 1.6 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γ S (t) • θch–c θch–c = 3.57°C/W, TC = 25°C 0.1 0.1 0.03 0.01 10 µ 0.05 PDM 0.02 0.01 1S h ul ot P se T 100 µ 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin 10 % D.U.T RL Vout 50 Ω Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 . VDD =. 30 V td (on) 10 % 90 % tr 10 % 90 % td (off) tf 2SK1566, 2SK1567 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK1566-E 2SK1567-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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