2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 Symbol VDSS Ratings 450 VGSS 500 ±30 V 20 80 A A 2SK1518 Gate to source voltage Drain current Drain peak current ID ID(pulse) *1 Unit V Body to drain diode reverse drain current Channel dissipation IDR Pch*2 20 120 A W Channel temperature Storage temperature Tch Tstg 150 –55 to +150 °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V(BR)DSS 450 500 — — V ID = 10 mA, VGS = 0 V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 IDSS — — 250 µA VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — 0.20 3.0 0.25 V Ω ID = 1 mA, VDS = 10 V 3 ID = 10 A, VGS = 10 V * |yfs| — 10 0.22 16 0.27 — S ID = 10 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss — — 3050 940 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 140 35 — — pF ns tr 130 240 — — ns ns Drain to source breakdown voltage 2SK1517 2SK1518 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1517 2SK1518 Gate to source cutoff voltage Static drain to source on 2SK1517 state resistance 2SK1518 Forward transfer admittance Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 105 1.0 — — ns V trr — 120 — ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions 3 ID = 10 A, VGS = 10 V, RL = 3 Ω IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 100 A/µs 2SK1517, 2SK1518 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 re a 50 10 (o n) 10 DS sa 100 30 O is per lim at ite ion d in by th R i Drain Current ID (A) Channel Dissipation Pch (W) 150 PW D C O 10 = pe ra 1 10 n µs µs s m s tio 3 m 0 (T C 1 0.3 (1 = Sh ot 25 ) °C ) 2SK1518 2SK1517 Ta = 25°C 0.1 0 50 100 150 1 Case Temperature TC (°C) 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 50 20 10 V 7V 6V 40 Drain Current ID (A) Drain Current ID (A) 3 Pulse Test 30 20 5V 10 VDS = 20 V Pulse Test 16 12 8 25°C 75°C TC = – 25°C 4 VGS = 4 V 10 20 30 40 50 2 6 4 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 6 20 A 4 10 A 2 0 0 ID = 5 A 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 5 2 Pulse Test 1 0.5 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test VGS = 10 V 0.8 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 –40 40 0 80 120 160 2 1 0.5 0.2 0.1 0.05 0.2 0.5 1 2 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 1,000 Coss 100 Crss 100 10 1 2 5 10 20 50 10 30 20 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VDD = 100 V 250 V 400 V 16 VGS VDS 300 12 200 8 0 0 VDD = 400 V 250 V 100 V 40 80 ID = 20 A 120 160 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 4 0 200 Gate to Source Voltage VGS (V) 50 0.5 100 20 VGS = 0 f = 1 MHz Ciss 200 400 10 10,000 500 500 5 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) –25°C TC = 25°C 75°C Body to Drain Diode Reverse Recovery Time 1,000 Drain to Source Voltage VDS (V) VDS = 20 V Pulse Test Drain Current ID (A) 5,000 2,000 5 Case Temperature TC (°C) 50 500 td (off) Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1517, 2SK1518 200 tr tf 100 50 td (on) 20 • VGS = 10 V VDD = 30 V 10 PW = 2 µs, duty < 1% • 5 0.5 1 2 5 10 20 Drain Current ID (A) 50 2SK1517, 2SK1518 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 16 Pulse Test 12 5V 8 10 V 4 VGS = 0, –10 V 0.4 0 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 0.05 0.02 θch–c (t) = γS (t) • θch–c θch–c = 1.08°C/W, TC = 25°C 0.1 0.03 0.01 hot 1S 0.01 10 µ PDM ulse P T 100 µ 1m 10 m 100 m PW D = PW T 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Ω Vin 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 VDD . =. 30 V Vout td (on) 10% 10% 90% tr 10% 90% td (off) tf 2SK1517, 2SK1518 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1517-E 2SK1518-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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