2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 S 3 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Ratings 180 200 ±20 8 8 100 150 –55 to +150 VGSS ID IDR Pch*1 Tch Tstg Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 180 200 Typ — — Max — — Unit V Test conditions ID = 10 mA, VGS = –10 V 2SK2220 V(BR)DSX 2SK2221 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff 0.15 — 0.7 — — — — — — — 1.0 600 800 8 250 90 1.45 12 1.4 — — — — — V V S pF pF pF ns ns ID = 100 mA, VDS = 10 V ID = 8 A, VGD = 0 V*2 ID = 3 A, VDS = 10 V*2 Drain to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 5 VGS = –5 V, VDS = 10 V, f = 1 MHz VDD = 30 V, ID = 4 A 2SK2220, 2SK2221 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 20 Ta = 25°C m s 0 (1 10 s t) (1 o Sh t) = (T C 25 1.0 o Sh m n tio ra ) °C Drain Current ID (A) 10 = pe O 2 0.5 2SK2220 0 50 100 2SK2221 0.2 150 5 20 10 50 100 200 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Output Characteristics 9 8 VGS = 10 V 8 10 TC = 25°C 7 6 Pch = 125 W 6 5 4 4 3 2 TC = 25°C VGS = 10 V 8 9 8 7 6 6 5 4 4 3 2 2 0 10 20 2 1 1 30 40 50 0 8 Typical Transfer Characteristics Typical Transfer Characteristics 10 4 2 2 4 6 8 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 5 10 75 0.6 25 25 °C VDS = 10 V =– 75 0.8 C 25 =– VDS = 10 V Drain Current ID (A) 25 ° C 1.0 TC Drain Current ID (A) 6 Drain to Source Voltage VDS (V) 6 0 4 Drain to Source Voltage VDS (V) 10 8 2 0 T 0 500 Case Temperature TC (°C) Drain Current ID (A) 10 Drain Current ID (A) = PW 50 5 C 100 PW 10 D Channel Dissipation Pch (W) 150 0.4 0.2 0 0.4 0.8 1.2 1.6 Gate to Source Voltage VGS (V) 2.0 Forward Transfer Admittance vs. Frequency Switching Time vs. Drain Current 5 500 Switching Time t on, t off (ns) Forward Transfer Admittance yfs (S) 2SK2220, 2SK2221 1.0 0.1 TC = 25°C VDS = 10 V ID = 2 A 0.01 0.001 0.0005 2k 10 k 10 M 20 M 1M 100 k t on 200 100 50 t off 20 10 5 0.1 0.2 Frequency f (Hz) 0.5 1.0 2 5 10 Drain Current ID (A) Switching Time Test Circuit Waveforms Output 90% RL Input Input 10% t on PW = 50 µs duty ratio = 1% 30 V 10% 50 Ω Output 90% Rev.2.00 Sep 07, 2005 page 4 of 5 t off 2SK2220, 2SK2221 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK2220-E 2SK2221-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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