Small Signal MOSFET 115 mAmps, 60 Volts

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
L2N7002EM3T5G
S-L2N7002EM3T5G
N–Channel SOT–723
3
• Pb−Free Package is Available.
• ESD Protected:2000V
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
1
ORDERING INFORMATION
SOT-723
Device
Marking
Shipping
L2N7002EM3T5G
S-L2N7002EM3T5G
RK
8000 Tape & Reel
N - Channel
3
MAXIMUM RATINGS
d
Rating
Drain–Source Voltage
Drain Current
– Continuous TC = 25°C (Note 1.)
–
– Continuous
Pulse t < 10us
Symbol
Value
Unit
VDSS
60
Vdc
1
ID
±115
IDM
±800
g
mAdc
s
2
VGS
±20
Vdc
Symbol
Max
Unit
PD
150
1.2
mW
mW/°C
RθJA
833
°C/W
TJ, Tstg
–55 to
+150
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
°C
3
RK
1
Gate
RK
M
M
Gate–Source Voltage
– Continuous
2
Source
= Device Code
= Month Code
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. FR–5 = 1.0 x 0.75 x 0.062 in.
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
L2N7002EM3T5G , S-L2N7002EM3T5G
z(OHFWULFDOFKDUDFWHULVWLFV7D °&
Parameter
Gate-source leakage current
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IGSS
−
−
±10
µA
VGS=±20V, VDS=0V
V (BR) DSS
60
−
−
V
ID=10µA, VGS=0V
IDSS
−
−
1
µA
VDS=60V, VGS=0V
VGS (th)
1
1.85
2.5
V
VDS=VGS , ID=250uA
−
−
7.5
Drain-source on-state resistance RDS (on)∗
Ω
ID=0.5A, VGS=10V
−
−
7.5
l Yfs l∗
80
−
−
mS
VDS=10V, ID=0.2A
Input capacitance
Ciss
−
25
50
pF
Output capacitance
Coss
−
10
25
pF
Reverse transfer capacitance
VDS=25V
VGS=0V
f=1MHz
Forward transfer admittance
Crss
−
3.0
5.0
pF
Turn-on delay time
td (on)∗
−
12
20
ns
Turn-off delay time
td (off)∗
−
20
30
ns
ID=0.05A, VGS=5V
ID=200mA, VDD 30V
VGS=10V, RL=150Ω ,RGS=10Ω
∗ PW≤300µs, Duty cycle≤1%
z(OHFWULFDOFKDUDFWHULVWLF curveV
≤
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
L2N7002EM3T5G , S-L2N7002EM3T5G
z(OHFWULFDOFKDUDFWHULVWLF curveV (continues) zSwitching FKDUDFWHULVWLFs measurement circuit
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
L2N7002EM3T5G , S-L2N7002EM3T5G
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.20
0.27
0.25
0.3
0.35
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0079 0.0106
0.010 0.012 0.014
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm Ǔ
ǒinches
Rev .O 4/4