MIXA20WB1200TMI tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I FSM = 70 A I C25 = 270 A VCE(sat) = = 28 A 1.8 V VCE(sat) = 28 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA20WB1200TMI Backside: isolated P P1 G1 T1 G3 G5 L1 B L2 L3 U V W T2 GB N G2 NB G4 EU G6 EV EW Features / Advantages: Applications: Package: MiniPack2B ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current VR = 1600 V TVJ = 25°C 10 µA VR = 1600 V TVJ = 125°C 1 mA TVJ = 25°C 1.19 V 1.54 V 1.12 V VF IF = forward voltage drop 20 A IF = 40 A IF = 20 A bridge output current IF = 40 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 1.59 V T VJ = 150 °C 70 A TVJ = 150 °C 0.86 V d=⅓ for power loss calculation only Ptot typ. TVJ = 125 °C TC = 80°C I DAV I²t min. 12.3 mΩ 1.8 K/W 0.35 K/W TC = 25°C 70 W t = 10 ms; (50 Hz), sine TVJ = 45°C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 290 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 230 A t = 8,3 ms; (60 Hz), sine VR = 0 V 250 A t = 10 ms; (50 Hz), sine TVJ = 45°C 365 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 350 A²s TVJ = 150 °C 265 A²s 260 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20140129 MIXA20WB1200TMI tentative Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25°C 28 A TC = 80 °C 20 A 100 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.6 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 15 A t d(on) turn-on delay time IC = 15 A; V GE = 15 V TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C 5.9 6.5 V 0.1 mA mA 0.1 500 inductive load VCE = 600 V; IC = 5.4 V TVJ = 125°C 15 A VGE = ±15 V; R G = 56 Ω VGE = ±15 V; R G = 56 Ω 48 nC 70 ns 40 ns 250 ns 100 ns 1.6 mJ 1.7 mJ TVJ = 125°C VCEK = 1200 V SCSOA short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 56 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA TVJ = 125°C 45 A 10 µs A 60 1.26 K/W K/W 0.42 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 18 A TC = 80 °C 12 A TVJ = 25°C 2.20 V TVJ = 25°C 0.1 mA TVJ = 125°C 0.2 mA I F 80 VF forward voltage I F = 10 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 600 V 10 A 250 A/µs TVJ = 125°C V 2.20 1.3 µC 10.5 A 350 ns 0.4 mJ 2.5 K/W 0.83 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20140129 MIXA20WB1200TMI tentative Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = I C80 TC = 25°C 28 A TC = 80 °C 20 A 100 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.6 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time IC = 15 A; VGE = 15 V TVJ = 25°C 1.8 TVJ = 125 °C 2.1 TVJ = 125 °C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C 600 V; IC = 5.9 6.5 V 0.1 mA mA 0.1 500 inductive load VCE = 5.4 V 15 A TVJ = 125 °C 15 A VGE = ±15 V; R G = 56 Ω VGE = ±15 V; R G = 56 Ω 48 nC 70 ns 40 ns 250 ns 100 ns 1.6 mJ 1.7 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 56 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA TVJ = 125 °C 45 A 10 µs A 60 1.26 K/W K/W 0.42 Inverter Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 18 A TC = 80 °C 12 A 2.20 V I F 80 VF forward voltage IF = 10 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved VR = 600 V -di F /dt = 250 A/µs IF = 10 A; VGE = 0 V 0.1 TVJ = 25°C TVJ = 125°C TVJ = 125°C V 2.20 mA 0.2 mA 1.3 µC 10.5 A 350 ns 0.4 mJ 2.5 K/W 0.83 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20140129 MIXA20WB1200TMI tentative Package Ratings MiniPack2B Symbol I RMS Definition Conditions min. RMS current per terminal typ. TVJ virtual junction temperature -40 150 °C T op operation temperature -40 125 °C Tstg storage temperature -40 125 °C 2.2 Nm Weight MD d Spb/Apb VISOL Unit A 39 2 mounting torque d Spp/App max. terminal to terminal 6.3 5.0 mm terminal to backside 11.5 10.0 mm 3000 V 2500 V creepage distance on surface | striking distance through air t = 1 second isolation voltage 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute R pin-chip resistance pin to chip Tvjm max. virtual junction temperature Logo g 6 V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF mΩ 175 °C Part number M I X A 20 WB 1200 T MI Location Date Code yywwx XXXXXXXXXXX Part number Ordering Standard 2D Data Matrix Part Number MIXA20WB1200TMI = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor MiniPack2B Marking on Product MIXA20WB1200TMI Delivery Mode Blister Quantity 20 Code No. 514795 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150 °C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode V 0 max threshold voltage 0.86 1.1 1.25 1.1 1.25 R 0 max slope resistance * 10 86 90 86 90 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 102 0 V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Outlines MiniPack2B W U V G3 L3 G1 G5 L2 P1 T2 L1 B T1 P G6 EW Pin positions with tolerance G4 EV G2 NB GB N EU Ø 0.4 P P1 G1 T1 G3 G5 L1 B L2 L3 V W T2 GB N IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved U G2 NB G4 EU G6 EV EW Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Rectifier t [s] VF [V] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180° t [ms] Fig. 3 I2t versus time per diode Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Brake IGBT 30 30 TVJ = 125°C 25°C 30 13 V VGE = 15 V 17 V 19 V 11 V 20 20 IC IC [A] [A] 20 IC 9V 10 [A] 10 10 TVJ = 125°C TVJ = 25°C TVJ = 125°C 0 0 0 1 2 3 0 0 1 2 3 4 5 5 6 7 8 VCE [V] VCE [V] Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 20 Fig. 3 4 15 E [V] Typ. transfer characteristics IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2.4 VGE 10 10 11 12 13 2.8 RG = 56 VCE = 600 V VGE = ±15 V 3 TVJ = 125°C IC = 15 A VCE = 600 V 9 VCE [V] Eoff E 2 2.0 [mJ] [mJ] Eoff 5 1 0 1.6 0 0 10 20 30 40 50 60 0 10 20 30 Eon 1.2 40 60 80 100 120 140 160 QG [nC] IC [A] RG [ ] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy versus gate resistance 2 1 ZthJC Ri ti [K/W] [s] [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 0.252 0.209 0.541 0.258 0.0015 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Brake Diode 20 2.4 24 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V 2.0 15 40 A 20 40 A Qrr 1.6 IC IRR 10 20 A 16 [A] 20 A [μC] 1.2 [A] 10 A TVJ = 125°C 25°C 5 0.8 0 0 12 10 A 1 2 0.4 200 3 300 400 -diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recovery charge Qrr versus di/dt 0.6 500 0.5 trr 400 400 500 Fig. 3 Typ. peak reverse current IRM versus di/dt TVJ = 125°C VR = 600 V 40 A 300 -diF /dt [A/μs] VCE [V] 600 8 200 500 TVJ = 125°C VR = 600 V 40 A Erec 20 A 0.4 [ns] 300 [mJ] 20 A 10 A 0.3 200 100 200 10 A 300 400 500 300 400 500 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.2 200 Fig. 6 Typ. recovery energy Erec versus -di/dt 10 ZthJC 1 [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 Ri 0.8 0.58 0.98 0.04 ti 0.002 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Inverter IGBT 30 30 TVJ = 125°C 25°C 30 13 V VGE = 15 V 17 V 19 V 11 V 20 20 IC IC [A] [A] 20 IC 9V 10 [A] 10 10 TVJ = 125°C TVJ = 25°C TVJ = 125°C 0 0 0 1 2 3 0 0 1 2 3 4 5 5 6 7 8 VCE [V] VCE [V] Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 20 Fig. 3 4 15 E [V] Typ. transfer characteristics IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2.4 VGE 10 10 11 12 13 2.8 RG = 56 VCE = 600 V VGE = ±15 V 3 TVJ = 125°C IC = 15 A VCE = 600 V 9 VCE [V] Eoff E 2 2.0 [mJ] [mJ] Eoff 5 1 0 1.6 0 0 10 20 30 40 50 60 0 10 20 30 Eon 1.2 40 60 80 100 120 140 160 QG [nC] IC [A] RG [ ] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy versus gate resistance 2 1 ZthJC Ri ti [K/W] [s] [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 0.252 0.209 0.541 0.258 0.0015 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129 MIXA20WB1200TMI tentative Inverter Diode 20 2.4 24 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V 2.0 15 40 A 20 40 A Qrr 1.6 IC IRR 10 20 A 16 [A] 20 A [μC] 1.2 [A] 10 A TVJ = 125°C 25°C 5 0.8 0 0 12 10 A 1 2 0.4 200 3 300 400 -diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recovery charge Qrr versus di/dt 0.6 500 0.5 trr 400 400 500 Fig. 3 Typ. peak reverse current IRM versus di/dt TVJ = 125°C VR = 600 V 40 A 300 -diF /dt [A/μs] VCE [V] 600 8 200 500 TVJ = 125°C VR = 600 V 40 A Erec 20 A 0.4 [ns] 300 [mJ] 20 A 10 A 0.3 200 100 200 10 A 300 400 500 300 400 500 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.2 200 Fig. 6 Typ. recovery energy Erec versus -di/dt 10 ZthJC 1 [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 Ri 0.8 0.58 0.98 0.04 ti 0.002 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140129