DHG 60 I 1200 HA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 60 A 200 ns Part number DHG 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 1200 V 100 µA VR = 1200 V TVJ = 125 °C 1.2 mA IF = TVJ = 25 °C 2.32 V 3.06 V 60 A IF = TVJ = 125 °C 60 A 2.34 V 3.37 V TC = 95°C 60 A TVJ = 150°C 1.25 V I F = 120 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 15 mΩ 0.35 K/W 150 °C TC = 25 °C 360 W TVJ = 45°C 500 A -55 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 1200 I F = 120 A VF0 max. TVJ = 25 °C TVJ = 25 °C 60 A; VR = 600 V -di F /dt = 1200 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 45 A TVJ = 125°C 60 A TVJ = 25 °C 200 ns TVJ = 125°C 350 ns TVJ = 25 °C 27 pF Data according to IEC 60747and per diode unless otherwise specified 20110617a DHG 60 I 1200 HA preliminary Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight 150 6 MD mounting torque FC mounting force with clip A K/W °C g 0.8 1.2 Nm 20 120 N Product Marking Part number Logo Marking on product DateCode Assembly Code D H G 60 I 1200 HA abcdef YYWWZ = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) 000000 Assembly Line Ordering Standard Ordering Number DHG 60 I 1200 HA Similar Part DSEP60-12A DSEP60-12AR IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG60I1200HA Package TO-247AD (2) ISOPLUS247 (2) Delivery Mode Tube Quantity 30 Code No. 507752 Voltage Class 1200 1200 Data according to IEC 60747and per diode unless otherwise specified 20110617a DHG 60 I 1200 HA preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20110617a DHG 60 I 1200 HA preliminary 120 14 100 12 TVJ = 125°C VR = 600 V 120 A 10 80 IF Qrr 60 [A] 60 A 8 [µC] 6 40 30 A TVJ = 125°C TVJ = 25°C 20 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 700 800 900 1000 Fig. 1 Typ. Forward current versus VF 1300 700 TVJ = 125°C VR = 600 V 80 120 A TVJ = 125°C VR = 600 V 600 70 500 60 A 60 [A] 1200 Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 90 IRM 1100 diF /dt [A/µs] VF [V] 30 A 50 trr 40 400 120 A 60 A [ns] 300 30 A 30 200 20 100 10 0 600 700 800 900 1000 1100 1200 0 600 1300 700 800 diF /dt [A/µs] 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 1 4.0 TVJ = 125°C 120 A VR = 600 V 3.2 60 A Erec 2.4 [mJ] ZthJC 30 A 1.6 0.1 [K/W] Ri 0.08 0.06 0.075 0.135 0.8 0.0 600 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 0.01 0.001 0.01 0.1 τi 0.0005 0.004 0.02 0.15 1 10 tP [s] Fig. 6 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110617a