DPG20C300PB

DPG20C300PB
HiPerFRED²
VRRM
=
300 V
I FAV
= 2x
10 A
t rr
=
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG20C300PB
Backside: cathode
1
2
3
Features / Advantages:
Applications:
Package: TO-220
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PB
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
300
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
300
V
IR
reverse current, drain current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
typ.
VR = 300 V
TVJ = 25°C
1
µA
VR = 300 V
TVJ = 150°C
0.06
mA
TVJ = 25°C
1.27
V
1.45
V
0.98
V
IF =
forward voltage drop
min.
10 A
IF =
20 A
IF =
10 A
IF =
20 A
TVJ = 150 °C
TC = 150°C
rectangular
1.17
V
T VJ = 175 °C
10
A
TVJ = 175 °C
0.74
V
d = 0.5
for power loss calculation only
17.7
mΩ
2.3
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 150 V f = 1 MHz
TVJ = 25°C
15
pF
I RM
max. reverse recovery current
TVJ = 25 °C
3
A
t rr
reverse recovery time
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
K/W
0.50
TC = 25°C
10 A; VR = 200 V
-di F /dt = 200 A/µs
65
140
W
A
TVJ = 125°C
5.5
A
TVJ = 25 °C
35
ns
TVJ = 125°C
45
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PB
Package
Ratings
TO-220
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
1)
Weight
2
MD
mounting torque
FC
mounting force with clip
Product Marking
Part Number
0.4
0.6
Nm
20
60
N
Part number
D
P
G
20
C
300
PB
XXXXXX
Logo
Assembly Line
Lot #
g
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
Zyyww
abcdef
Date Code
Ordering
Standard
Part Number
DPG20C300PB
Similar Part
DPG20C300PN
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG20C300PB
Package
TO-220ABFP (3)
* on die level
Delivery Mode
Tube
Code No.
504134
Voltage class
300
T VJ = 175 °C
Fast
Diode
V 0 max
threshold voltage
0.74
V
R 0 max
slope resistance *
14.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PB
Outlines TO-220
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170
0.045
0.090
0.190
0.055
0.110
b
b2
0.64
1.15
1.01
1.65
0.025
0.045
0.040
0.065
C
D
0.35
14.73
0.56
16.00
0.014
0.580
0.022
0.630
E
e
H1
9.91
2.54
5.85
10.66
BSC
6.85
0.390
0.100
0.230
0.420
BSC
0.270
L
L1
12.70
2.79
13.97
5.84
0.500
0.110
0.550
0.230
ØP
Q
3.54
2.54
4.08
3.18
0.139
0.100
0.161
0.125
A
A1
ØP
H1
Q
E
D
4
3
L
3x b2
2
L1
1
3x b
2x e
C
A2
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
2
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PB
Fast Diode
30
0.3
20 A
VR = 200 V
25
TVJ = 125°C
10
0.2
20 A
VR = 200 V
10 A
TVJ = 25°C
125°C
150°C
20
IF
12
TVJ = 125°C
10 A
8
Qrr
5A
5A
IRR
15
6
[μC]
[A] 10
[A]
0.1
4
5
2
0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
0
0
100
VF [V]
200
300
400
500
0
100
-diF /dt [A/μs]
Fig. 1 Forward current
IF versus VF
300
400
500
Fig. 3 Typ. reverse recov. current
IRR versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
80
1.4
200
-diF /dt [A/μs]
12
600
10
500
TVJ = 125°C
VR = 200 V
1.2
1.0
60
0.8
8
trr
Kf
0.6
IF = 20 A
[ns]
IRR
400
TVJ = 125°C
VFR
tfr
IF = 10 A
VR = 200 V
6
[V]
300
[ns]
4
40
200
0.4
10 A
Qrr
0.2
2
5A
0.0
20
0
40
80
120
160
TVJ [°C]
100
200
300
400
500
0
-diF /dt [A/μs]
100
200
300
400
100
0
500
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
10
tfr
0
0
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
VFR
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
3
TVJ = 125°C
VR = 200 V
8
Erec
[μJ]
2
IF = 5 A
6
ZthJH
10 A
20 A
[K/W]
4
1
2
0
0
100
200
300
400
500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
0
0.001
0.01
0.1
Rthi [K/W]
ti [s]
0.3866
0.7062
0.8127
0.3945
0.0004
0.0025
0.022
0.13
1
10
t [s]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a