MIXA30WB1200TMI tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 105 A I C25 I FSM = 320 A VCE(sat) = = = 43 A 1.8 V VCE(sat) = 28 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA30WB1200TMI Backside: isolated P P1 G1 T1 G3 G5 L1 B L2 L3 U V W T2 GB N G2 NB G4 EU G6 EV EW Features / Advantages: Applications: Package: MiniPack2B ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130208 MIXA30WB1200TMI tentative Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current, drain current VF forward voltage drop bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1600 V TVJ = 25°C 20 µA TVJ = 125°C tbd mA TVJ = 25°C 1.23 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A V thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.19 V T VJ = 150 °C 105 A TVJ = 150 °C 0.90 V d=⅓ for power loss calculation only R thCH TVJ = 125 °C V rectangular Ptot typ. VR = 1600 V TC = 80°C I DAV I²t min. 10 mΩ 1.1 K/W 0.35 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 320 A t = 8,3 ms; (60 Hz), sine VR = 0 V 345 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 295 A t = 10 ms; (50 Hz), sine TVJ = 45°C 510 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 495 A²s TVJ = 150 °C 365 A²s 360 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130208 MIXA30WB1200TMI tentative Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25°C 28 A TC = 80 °C 20 A 100 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.6 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 15 A t d(on) turn-on delay time IC = 15 A; VGE = 15 V TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C inductive load 5.9 6.5 V 0.1 mA mA 0.1 500 TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; R G = 56 Ω VGE = ±15 V; R G = 56 Ω 5.4 V nA 48 nC 70 ns 40 ns 250 ns 100 ns 1.6 mJ 1.7 mJ TVJ = 125°C VCEK = 1200 V 45 A 10 µs SCSOA short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 56 Ω; non-repetitive R thJC thermal resistance junction to case 1.26 K/W R thCH thermal resistance case to heatsink K/W TVJ = 125°C A 60 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 18 A TC = 80 °C 12 A TVJ = 25°C 2.20 V TVJ = 25°C 0.1 mA TVJ = 125°C 0.2 mA I F 80 VF forward voltage I F = 10 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 250 A/µs t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 600 V 10 A TVJ = 125°C V 2.20 1.3 µC 10.5 A 350 ns 0.4 mJ 2.5 K/W 0.83 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130208 MIXA30WB1200TMI tentative Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = I C80 TC = 25°C 43 A TC = 80 °C 30 A 150 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 25 A t d(on) turn-on delay time I C = 25 A; VGE = 15 V 1 mA; VGE = VCE TVJ = 25°C 1.8 TVJ = 125 °C 2.1 TVJ = 25°C current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM inductive load VCE = 5.9 TVJ = 125 °C VGE = ±15 V; R G = 39 Ω short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 39 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 6.5 V 0.15 mA mA 0.3 nA 76 nC 70 ns 40 ns 250 ns 100 ns 2.5 mJ 3 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA V 500 600 V; IC = 25 A VGE = ±15 V; R G = 39 Ω 5.4 TVJ = 25°C TVJ = 125 °C tr typ. 25°C TVJ = 125 °C 75 A 10 µs A 100 0.84 K/W K/W 0.28 Inverter Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 41 A TC = 80 °C 27 A 2.20 V I F 80 VF forward voltage I F = 30 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved * TVJ = 25°C -di F /dt = 600 A/µs IF = 30 A; VGE = 0 V TVJ = 125°C mA * mA 3.5 µC TVJ = 125°C VR = 600 V V 1.90 30 A 350 ns 0.9 mJ 1.2 K/W 0.4 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130208 MIXA30WB1200TMI tentative Package Ratings MiniPack2B Symbol I RMS Definition Conditions min. RMS current per terminal Tstg storage temperature -40 T VJ virtual junction temperature -40 typ. Weight MD d Spb/Apb VISOL Unit A 125 °C 150 °C 39 2 mounting torque d Spp/App max. R pin-chip resistance pin to chip Tvjm max. virtual junction temperature Logo Nm 6.3 5.0 mm terminal to backside 11.5 10.0 mm 3000 V 2500 V t = 1 second 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 2.2 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g 6 V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF mΩ 175 °C Part number yywwx XXXXXXXXXXX Part number Ordering Standard = = = = = = = = = M I X A 30 WB 1200 T MI Location Date Code 2D Data Matrix Part Number MIXA30WB1200TMI Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor MiniPack2B Marking on Product MIXA30WB1200TMI Delivery Mode Box Quantity 6 Code No. 511570 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150°C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode V 0 max threshold voltage 0.9 1.1 1.25 1.1 1.25 R 0 max slope resistance * 10 86 90 55 30 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 102 0 V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130208 MIXA30WB1200TMI tentative Outlines MiniPack2B W U V G3 L3 G1 G5 L2 P1 T2 L1 B T1 P G6 EW Pin positions with tolerance G4 EV G2 NB GB N EU Ø 0.4 P P1 G1 T1 G3 G5 L1 B L2 L3 V W T2 GB N IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved U G2 NB G4 EU G6 EV EW Data according to IEC 60747and per semiconductor unless otherwise specified 20130208