MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 600 V VCES = 650 V I DAV = 139 A I C25 I FSM = 550 A VCE(sat) = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA50WB600TED Backside: isolated 21 22 8 1 2 16 18 20 7 15 17 6 19 5 9 14 11 12 13 3 23 24 4 10 Features / Advantages: Applications: Package: E2-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708 MIXA50WB600TED tentative Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current VR = 1600 V TVJ = 25°C 20 µA VR = 1600 V TVJ = 125°C 3 mA TVJ = 25°C 1.23 V 1.43 V 1.18 V VF IF = forward voltage drop min. 50 A typ. I F = 100 A IF = TVJ = 125 °C 50 A I F = 100 A TC = 80°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved V 139 A TVJ = 150 °C 0.88 V d=⅓ for power loss calculation only Ptot 1.45 T VJ = 150 °C 5.7 mΩ 0.9 K/W K/W 0.10 TC = 25°C 139 W t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kA²s TVJ = 150 °C 1.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 600 V; f = 1 MHz TVJ = 25°C 1.06 kA²s tbd Data according to IEC 60747and per semiconductor unless otherwise specified pF 20140708 MIXA50WB600TED tentative Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 600 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25°C 29 A TC = 80 °C 20 A 100 W 2.5 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.5 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 300 V; VGE = 15 V; I C = 20 A t d(on) turn-on delay time IC = 20 A; V GE = 15 V TVJ = 25°C 2 TVJ = 125°C 2.15 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C 5.5 6.5 V 0.1 mA mA 0.1 500 inductive load VCE = 300 V; IC = 4.5 V TVJ = 125°C 20 A VGE = ±15 V; R G = 47 Ω VGE = ±15 V; R G = 47 Ω 65 nC 50 ns 55 ns 300 ns 30 ns 0.92 mJ 0.68 mJ TVJ = 125°C VCEK = 600 V SCSOA short circuit safe operating area t SC short circuit duration VCE = 360 V; VGE = ±15 V I SC short circuit current R G = 47 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA TVJ = 125°C 40 A 10 µs A 80 1.26 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 600 V I F25 forward current TC = 25°C 23 A TC = 80 °C 16 A TVJ = 25°C 2.00 V TVJ = 25°C 0.05 mA TVJ = 125°C 1 mA I F 80 VF forward voltage I F = 20 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 300 V 20 A 400 A/µs V 1.80 1.7 µC 18 A TVJ = 125°C 150 ns 0.3 mJ 2.4 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20140708 MIXA50WB600TED tentative Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 650 Unit V max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = I C80 TC = 25°C 64 A TC = 80 °C 43 A 156 W 1.8 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.8 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 300 V; VGE = 15 V; IC = t d(on) turn-on delay time IC = 50 A; VGE = 15 V TVJ = 25°C 1.6 TVJ = 125 °C 1.9 TVJ = 125 °C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C 300 V; IC = 4.8 5.5 V 0.1 mA mA 0.1 500 inductive load VCE = 4 V 50 A TVJ = 125 °C 50 A VGE = ±15 V; R G = 15 Ω VGE = ±15 V; R G = 15 Ω 70 nC 30 ns 50 ns 100 ns 40 ns 1.2 mJ 1.7 mJ TVJ = 125 °C VCEmax = 650 V SCSOA short circuit safe operating area VCEmax = 650 V t SC short circuit duration VCE = 360 V; VGE = ±15 V I SC short circuit current R G = 15 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA TVJ = 125 °C 100 A 10 µs A 200 0.8 K/W K/W 0.10 Inverter Diode VRRM max. repetitive reverse voltage TVJ = 25°C 650 V I F25 forward current TC = 25°C 50 A TC = 80 °C 41 A 2.00 V I F 80 VF forward voltage IF = 50 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved VR = 300 V -di F /dt = 900 A/µs IF = 50 A; VGE = 0 V 0.1 TVJ = 25°C TVJ = 125°C TVJ = 125°C V 1.80 mA 0.5 mA 4.5 µC 45 A 150 ns 1 mJ 1.2 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20140708 MIXA50WB600TED tentative Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op Tstg min. max. 200 Unit A -40 150 °C operation temperature -40 125 °C storage temperature -40 125 °C 6 Nm Weight MD 176 3 mounting torque d Spp/App d Spb/Apb VISOL typ. terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V creepage distance on surface | striking distance through air t = 1 second isolation voltage 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 2D Data Matrix Part description M I X A 50 WB 600 T ED XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard g Ordering Number MIXA50WB600TED = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E2-Pack Marking on Product MIXA50WB600TED Delivery Mode Box Quantity 6 Code No. 511094 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150 °C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode 102 0 V 0 max threshold voltage 0.86 1.2 1.2 1.1 1.2 V R 0 max slope resistance * 5.1 83 44 21 17.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20140708 MIXA50WB600TED tentative Outlines E2-Pack 21 22 8 1 2 16 18 20 7 15 17 6 19 5 9 14 11 12 13 3 23 24 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 4 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20140708